Electrical characterization of thin film ferroelectric capacitors

M.P.J. Tiggelman, K. Reimann, M. Klee, D. Beelen, W. Keur, Jurriaan Schmitz, Raymond Josephus Engelbart Hueting

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.
    Original languageUndefined
    Title of host publicationProceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
    Place of PublicationUtrecht, The Netherlands
    Number of pages5
    ISBN (Print)90-73461-44-8
    Publication statusPublished - 23 Nov 2006
    Event9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands
    Duration: 23 Nov 200624 Nov 2006
    Conference number: 9

    Publication series

    PublisherTechnology Foundation STW


    Workshop9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006


    • SC-ICF: Integrated Circuit Fabrication
    • IR-63762
    • METIS-237710
    • EWI-8416

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