Electrical characterization of thin film ferroelectric capacitors

M.P.J. Tiggelman; K. Reimann; M. Klee; D. Beelen; W. Keur; Jurriaan Schmitz; Raymond Josephus Engelbart Hueting

Electrical characterization of thin film ferroelectric capacitors

M.P.J. Tiggelman, K. Reimann, M. Klee, D. Beelen, W. Keur, Jurriaan Schmitz, Raymond Josephus Engelbart Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.

Original language	Undefined
Title of host publication	Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	439-443
Number of pages	5
ISBN (Print)	90-73461-44-8
Publication status	Published - 23 Nov 2006
Event	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9

Publication series

Name
Publisher	Technology Foundation STW
Number	10

Workshop

Workshop	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Country/Territory	Netherlands
City	Veldhoven
Period	23/11/06 → 24/11/06

Keywords

SC-ICF: Integrated Circuit Fabrication
IR-63762
METIS-237710
EWI-8416

Access to Document

tiggelman

http://eprints.eemcs.utwente.nl/secure2/8416/01/tiggelman.pdf

Cite this

@inproceedings{0795e1fd29b64ce9a12fea03a38d4b59,

title = "Electrical characterization of thin film ferroelectric capacitors",

abstract = "Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.",

keywords = "SC-ICF: Integrated Circuit Fabrication, IR-63762, METIS-237710, EWI-8416",

author = "M.P.J. Tiggelman and K. Reimann and M. Klee and D. Beelen and W. Keur and Jurriaan Schmitz and Hueting, {Raymond Josephus Engelbart}",

year = "2006",

month = nov,

day = "23",

language = "Undefined",

isbn = "90-73461-44-8",

publisher = "STW",

number = "10",

pages = "439--443",

booktitle = "Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006",

note = "9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 ; Conference date: 23-11-2006 Through 24-11-2006",

}

Tiggelman, MPJ, Reimann, K, Klee, M, Beelen, D, Keur, W, Schmitz, J & Hueting, RJE 2006, Electrical characterization of thin film ferroelectric capacitors. in Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. STW, Utrecht, The Netherlands, pp. 439-443, 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006, Veldhoven, Netherlands, 23/11/06. <http://eprints.eemcs.utwente.nl/secure2/8416/01/tiggelman.pdf>

Electrical characterization of thin film ferroelectric capacitors. / Tiggelman, M.P.J.; Reimann, K.; Klee, M. et al.
Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW, 2006. p. 439-443.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Electrical characterization of thin film ferroelectric capacitors

AU - Tiggelman, M.P.J.

AU - Reimann, K.

AU - Klee, M.

AU - Beelen, D.

AU - Keur, W.

AU - Schmitz, Jurriaan

AU - Hueting, Raymond Josephus Engelbart

N1 - Conference code: 9

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Y1 - 2006/11/23

N2 - Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.

AB - Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.

KW - SC-ICF: Integrated Circuit Fabrication

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KW - METIS-237710

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M3 - Conference contribution

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BT - Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006

PB - STW

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