Electrical characterization of thin film ferroelectric capacitors

M.P.J. Tiggelman, K. Reimann, M. Klee, D. Beelen, W. Keur, Jurriaan Schmitz, Raymond Josephus Engelbart Hueting

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    225 Downloads (Pure)

    Abstract

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.
    Original languageUndefined
    Title of host publicationProceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages439-443
    Number of pages5
    ISBN (Print)90-73461-44-8
    Publication statusPublished - 23 Nov 2006

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number10

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • IR-63762
    • METIS-237710
    • EWI-8416

    Cite this

    Tiggelman, M. P. J., Reimann, K., Klee, M., Beelen, D., Keur, W., Schmitz, J., & Hueting, R. J. E. (2006). Electrical characterization of thin film ferroelectric capacitors. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 439-443). Utrecht, The Netherlands: STW.
    Tiggelman, M.P.J. ; Reimann, K. ; Klee, M. ; Beelen, D. ; Keur, W. ; Schmitz, Jurriaan ; Hueting, Raymond Josephus Engelbart. / Electrical characterization of thin film ferroelectric capacitors. Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. pp. 439-443
    @inproceedings{0795e1fd29b64ce9a12fea03a38d4b59,
    title = "Electrical characterization of thin film ferroelectric capacitors",
    abstract = "Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.",
    keywords = "SC-ICF: Integrated Circuit Fabrication, IR-63762, METIS-237710, EWI-8416",
    author = "M.P.J. Tiggelman and K. Reimann and M. Klee and D. Beelen and W. Keur and Jurriaan Schmitz and Hueting, {Raymond Josephus Engelbart}",
    year = "2006",
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    isbn = "90-73461-44-8",
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    Tiggelman, MPJ, Reimann, K, Klee, M, Beelen, D, Keur, W, Schmitz, J & Hueting, RJE 2006, Electrical characterization of thin film ferroelectric capacitors. in Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. STW, Utrecht, The Netherlands, pp. 439-443.

    Electrical characterization of thin film ferroelectric capacitors. / Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart.

    Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. p. 439-443.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    T1 - Electrical characterization of thin film ferroelectric capacitors

    AU - Tiggelman, M.P.J.

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    AU - Klee, M.

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    AU - Schmitz, Jurriaan

    AU - Hueting, Raymond Josephus Engelbart

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    N2 - Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.

    AB - Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.

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    Tiggelman MPJ, Reimann K, Klee M, Beelen D, Keur W, Schmitz J et al. Electrical characterization of thin film ferroelectric capacitors. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW. 2006. p. 439-443