Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.
|Title of host publication||Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||5|
|Publication status||Published - 23 Nov 2006|
|Event||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands|
Duration: 23 Nov 2006 → 24 Nov 2006
Conference number: 9
|Publisher||Technology Foundation STW|
|Workshop||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006|
|Period||23/11/06 → 24/11/06|
- SC-ICF: Integrated Circuit Fabrication
Tiggelman, M. P. J., Reimann, K., Klee, M., Beelen, D., Keur, W., Schmitz, J., & Hueting, R. J. E. (2006). Electrical characterization of thin film ferroelectric capacitors. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 439-443). Utrecht, The Netherlands: STW.