The thesis shows the results of four years of research into the electrical stability of a-Si:H/SiN TFTs. Various methods of investigation of a-Si:H/SiN TFTs have been carried out in this thesis towards understanding the causes of degradation that shortens the transistor lifetime and narrows the transistor application area. The research aims to cast light on the mechanism responsible for a-Si:H/SiN TFTs degradation during short and long period of voltage stress at room temperature.
|Award date||11 Jun 2004|
|Place of Publication||Enschede|
|Publication status||Published - 11 Jun 2004|