Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency

L. Shi; L. K. Nanver; C. Laubis; F. Scholze; S. Nihtianov

doi:10.1109/TRANSDUCERS.2011.5969130

Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency

L. Shi^*, L. K. Nanver, C. Laubis, F. Scholze, S. Nihtianov

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

Ultrashallow Si p⁺n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity.

Original language	English
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	48-51
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969130
Publication status	Published - 1 Sept 2011
Externally published	Yes
Event	16th International Solid-State Sensors, Actuators and Microsystems Conference - China National Convention Center, Beijing, China Duration: 5 Jun 2011 → 9 Jun 2011 Conference number: 16 http://transducers11-beijing.org/

Publication series

Name	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference	16th International Solid-State Sensors, Actuators and Microsystems Conference
Abbreviated title	TRANSDUCERS 2011
Country/Territory	China
City	Beijing
Period	5/06/11 → 9/06/11
Internet address	http://transducers11-beijing.org/

Keywords

dark current
Extreme-Ultraviolet
photodiode
response time
responsivity
series resistance
ultrashallow junctions

Access to Document

10.1109/TRANSDUCERS.2011.5969130

Cite this

Shi, L., Nanver, L. K., Laubis, C., Scholze, F., & Nihtianov, S. (2011). Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 48-51). Article 5969130 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969130

Shi, L. ; Nanver, L. K. ; Laubis, C. et al. / Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 48-51 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

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title = "Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency",

abstract = "Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity.",

keywords = "dark current, Extreme-Ultraviolet, photodiode, response time, responsivity, series resistance, ultrashallow junctions",

author = "L. Shi and Nanver, {L. K.} and C. Laubis and F. Scholze and S. Nihtianov",

year = "2011",

month = sep,

day = "1",

doi = "10.1109/TRANSDUCERS.2011.5969130",

language = "English",

isbn = "9781457701573",

series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

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booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011 ; Conference date: 05-06-2011 Through 09-06-2011",

url = "http://transducers11-beijing.org/",

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Shi, L, Nanver, LK, Laubis, C, Scholze, F & Nihtianov, S 2011, Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969130, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 48-51, 16th International Solid-State Sensors, Actuators and Microsystems Conference, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969130

Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency. / Shi, L.; Nanver, L. K.; Laubis, C. et al.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 48-51 5969130 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency

AU - Shi, L.

AU - Nanver, L. K.

AU - Laubis, C.

AU - Scholze, F.

AU - Nihtianov, S.

N1 - Conference code: 16

PY - 2011/9/1

Y1 - 2011/9/1

N2 - Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity.

AB - Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity.

KW - dark current

KW - Extreme-Ultraviolet

KW - photodiode

KW - response time

KW - responsivity

KW - series resistance

KW - ultrashallow junctions

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DO - 10.1109/TRANSDUCERS.2011.5969130

M3 - Conference contribution

AN - SCOPUS:80052120833

SN - 9781457701573

T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

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EP - 51

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - 16th International Solid-State Sensors, Actuators and Microsystems Conference

Y2 - 5 June 2011 through 9 June 2011

ER -

Shi L, Nanver LK, Laubis C, Scholze F, Nihtianov S. Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 48-51. 5969130. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969130

Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency

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Keywords

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