Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency

L. Shi*, L. K. Nanver, C. Laubis, F. Scholze, S. Nihtianov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages48-51
Number of pages4
DOIs
Publication statusPublished - 1 Sep 2011
Externally publishedYes
Event16th International Solid-State Sensors, Actuators and Microsystems Conference - China National Convention Center, Beijing, China
Duration: 5 Jun 20119 Jun 2011
Conference number: 16
http://transducers11-beijing.org/

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference16th International Solid-State Sensors, Actuators and Microsystems Conference
Abbreviated titleTRANSDUCERS 2011
CountryChina
CityBeijing
Period5/06/119/06/11
Internet address

Keywords

  • dark current
  • Extreme-Ultraviolet
  • photodiode
  • response time
  • responsivity
  • series resistance
  • ultrashallow junctions

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