Abstract
Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity.
Original language | English |
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Title of host publication | 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 |
Pages | 48-51 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Sept 2011 |
Externally published | Yes |
Event | 16th International Solid-State Sensors, Actuators and Microsystems Conference - China National Convention Center, Beijing, China Duration: 5 Jun 2011 → 9 Jun 2011 Conference number: 16 http://transducers11-beijing.org/ |
Publication series
Name | 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 |
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Conference
Conference | 16th International Solid-State Sensors, Actuators and Microsystems Conference |
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Abbreviated title | TRANSDUCERS 2011 |
Country/Territory | China |
City | Beijing |
Period | 5/06/11 → 9/06/11 |
Internet address |
Keywords
- dark current
- Extreme-Ultraviolet
- photodiode
- response time
- responsivity
- series resistance
- ultrashallow junctions