Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

L. Shi, S. N. Nihtianov, F. Scholze, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

Recently, silicon-based ultrashallow junction p+n photodiodes fabricated by pure boron CVD technology (Pure-Bdiodes)[1][2][3] were evaluated for detection in the Extreme Ultra-Violet (EUV) spectral range spanning from 3 nm to 15 nm. A near-theoretical responsivity (0.265 A/W) [4][5] has been achieved at a wavelength of 13.5 nm [3], which is the operating wavelength of the next-generation lithography systems [6]. Besides the outstanding optical performance stability already reported [3], in this paper, the electrical performance stability of PureB-diodes is characterized. The experimental results show that the main reason for the increasing EUV-induced dark current is the radiation-caused damage along the Si-SiO2 interface. However, this damage can be minimized by introducing a silicon nitride layer to the surface-passivation layer stack.

Original languageEnglish
Title of host publicationProceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
Pages3952-3957
Number of pages6
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
Event38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012 - Montreal, Canada
Duration: 25 Oct 201228 Oct 2012
Conference number: 38

Conference

Conference38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012
Abbreviated titleIECON 2012
CountryCanada
CityMontreal
Period25/10/1228/10/12

Fingerprint

Photodiodes
Industrial applications
Wavelength
Dark currents
Radiation damage
Silicon nitride
Passivation
Lithography
Boron
Chemical vapor deposition
Diodes
Silicon

Keywords

  • dark current
  • extreme-ultraviolet (EUV) radiation
  • photodiodes
  • responsivity
  • ultrashallow junctions

Cite this

Shi, L., Nihtianov, S. N., Scholze, F., & Nanver, L. K. (2012). Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. In Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society (pp. 3952-3957). [6389260] https://doi.org/10.1109/IECON.2012.6389260
Shi, L. ; Nihtianov, S. N. ; Scholze, F. ; Nanver, L. K. / Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society. 2012. pp. 3952-3957
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Shi, L, Nihtianov, SN, Scholze, F & Nanver, LK 2012, Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. in Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society., 6389260, pp. 3952-3957, 38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012, Montreal, Canada, 25/10/12. https://doi.org/10.1109/IECON.2012.6389260

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. / Shi, L.; Nihtianov, S. N.; Scholze, F.; Nanver, L. K.

Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society. 2012. p. 3952-3957 6389260.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Shi L, Nihtianov SN, Scholze F, Nanver LK. Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. In Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society. 2012. p. 3952-3957. 6389260 https://doi.org/10.1109/IECON.2012.6389260