Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

L. Shi; S. N. Nihtianov; F. Scholze; L. K. Nanver

doi:10.1109/IECON.2012.6389260

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

L. Shi^*, S. N. Nihtianov, F. Scholze, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

Recently, silicon-based ultrashallow junction p⁺n photodiodes fabricated by pure boron CVD technology (Pure-Bdiodes)[1][2][3] were evaluated for detection in the Extreme Ultra-Violet (EUV) spectral range spanning from 3 nm to 15 nm. A near-theoretical responsivity (0.265 A/W) [4][5] has been achieved at a wavelength of 13.5 nm [3], which is the operating wavelength of the next-generation lithography systems [6]. Besides the outstanding optical performance stability already reported [3], in this paper, the electrical performance stability of PureB-diodes is characterized. The experimental results show that the main reason for the increasing EUV-induced dark current is the radiation-caused damage along the Si-SiO₂ interface. However, this damage can be minimized by introducing a silicon nitride layer to the surface-passivation layer stack.

Original language	English
Title of host publication	Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
Pages	3952-3957
Number of pages	6
DOIs	https://doi.org/10.1109/IECON.2012.6389260
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012 - Montreal, Canada Duration: 25 Oct 2012 → 28 Oct 2012 Conference number: 38

Conference

Conference	38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012
Abbreviated title	IECON 2012
Country/Territory	Canada
City	Montreal
Period	25/10/12 → 28/10/12

Keywords

dark current
extreme-ultraviolet (EUV) radiation
photodiodes
responsivity
ultrashallow junctions

Access to Document

10.1109/IECON.2012.6389260

Cite this

@inproceedings{153962fa55fd48c99f8874dc856e29e3,

title = "Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application",

abstract = "Recently, silicon-based ultrashallow junction p+n photodiodes fabricated by pure boron CVD technology (Pure-Bdiodes)[1][2][3] were evaluated for detection in the Extreme Ultra-Violet (EUV) spectral range spanning from 3 nm to 15 nm. A near-theoretical responsivity (0.265 A/W) [4][5] has been achieved at a wavelength of 13.5 nm [3], which is the operating wavelength of the next-generation lithography systems [6]. Besides the outstanding optical performance stability already reported [3], in this paper, the electrical performance stability of PureB-diodes is characterized. The experimental results show that the main reason for the increasing EUV-induced dark current is the radiation-caused damage along the Si-SiO2 interface. However, this damage can be minimized by introducing a silicon nitride layer to the surface-passivation layer stack.",

keywords = "dark current, extreme-ultraviolet (EUV) radiation, photodiodes, responsivity, ultrashallow junctions",

author = "L. Shi and Nihtianov, {S. N.} and F. Scholze and Nanver, {L. K.}",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/IECON.2012.6389260",

language = "English",

isbn = "9781467324212",

pages = "3952--3957",

booktitle = "Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society",

note = "38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012, IECON 2012 ; Conference date: 25-10-2012 Through 28-10-2012",

}

Shi, L, Nihtianov, SN, Scholze, F & Nanver, LK 2012, Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. in Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society., 6389260, pp. 3952-3957, 38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012, Montreal, Quebec, Canada, 25/10/12. https://doi.org/10.1109/IECON.2012.6389260

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. / Shi, L.; Nihtianov, S. N.; Scholze, F. et al.
Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society. 2012. p. 3952-3957 6389260.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

AU - Shi, L.

AU - Nihtianov, S. N.

AU - Scholze, F.

AU - Nanver, L. K.

N1 - Conference code: 38

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Recently, silicon-based ultrashallow junction p+n photodiodes fabricated by pure boron CVD technology (Pure-Bdiodes)[1][2][3] were evaluated for detection in the Extreme Ultra-Violet (EUV) spectral range spanning from 3 nm to 15 nm. A near-theoretical responsivity (0.265 A/W) [4][5] has been achieved at a wavelength of 13.5 nm [3], which is the operating wavelength of the next-generation lithography systems [6]. Besides the outstanding optical performance stability already reported [3], in this paper, the electrical performance stability of PureB-diodes is characterized. The experimental results show that the main reason for the increasing EUV-induced dark current is the radiation-caused damage along the Si-SiO2 interface. However, this damage can be minimized by introducing a silicon nitride layer to the surface-passivation layer stack.

AB - Recently, silicon-based ultrashallow junction p+n photodiodes fabricated by pure boron CVD technology (Pure-Bdiodes)[1][2][3] were evaluated for detection in the Extreme Ultra-Violet (EUV) spectral range spanning from 3 nm to 15 nm. A near-theoretical responsivity (0.265 A/W) [4][5] has been achieved at a wavelength of 13.5 nm [3], which is the operating wavelength of the next-generation lithography systems [6]. Besides the outstanding optical performance stability already reported [3], in this paper, the electrical performance stability of PureB-diodes is characterized. The experimental results show that the main reason for the increasing EUV-induced dark current is the radiation-caused damage along the Si-SiO2 interface. However, this damage can be minimized by introducing a silicon nitride layer to the surface-passivation layer stack.

KW - dark current

KW - extreme-ultraviolet (EUV) radiation

KW - photodiodes

KW - responsivity

KW - ultrashallow junctions

UR - http://www.scopus.com/inward/record.url?scp=84873037080&partnerID=8YFLogxK

U2 - 10.1109/IECON.2012.6389260

DO - 10.1109/IECON.2012.6389260

M3 - Conference contribution

AN - SCOPUS:84873037080

SN - 9781467324212

SP - 3952

EP - 3957

BT - Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society

T2 - 38th Annual Conference on IEEE Industrial Electronics Society, IECON 2012

Y2 - 25 October 2012 through 28 October 2012

ER -

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this