Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C

Roald M. Tiggelaar, A.W. Groenland, Remco G.P. Sanders, Johannes G.E. Gardeniers

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)

Abstract

The results of a study on electrical conduction in low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C are described. Current density versus electrical field characteristics are measured as a function of temperature for 100 and 200 nm thick stoichiometric _Si3N4_ and low stress silicon-rich _SiRN_ films. For high E-fields and temperatures up to 500 °C conduction through Si3N4 can be described well by Frenkel–Poole transport with a barrier height of _1.10 eV, whereas for SiRN films Frenkel–Poole conduction prevails up to 350 °C with a barrier height of _0.92 eV. For higher temperatures, dielectric breakdown of the Si3N4 and SiRN films occurred before the E-field was reached above which Frenkel–Poole conduction dominates. A design graph is given that describes the maximum E-field that can be applied over silicon nitride films at high temperatures before electrical breakdown occurs. © 2009 American Institute of Physics
Original languageEnglish
Pages (from-to)033714
Number of pages6
JournalJournal of Applied Physics
Volume105
Issue number3
DOIs
Publication statusPublished - 9 Feb 2009

Keywords

  • SC-ICS: Integrated Chemical Sensors
  • IR-62744
  • METIS-253150
  • EWI-15110

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