Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited a competitive performance. For better understanding of the influence of deposition parameters on both the deposition kinetics and oxide quality, we have modeled the Ar-SiH4-N2O plasma system with 173 chemical reactions. We simulated concentrations of 43 reactive species (such as e.g. SiHx radicals and SiHx + (x=0-3) ions, polysilanes, SiO, SiN, SiH3O, SiH2O, HSiO, etc., as well as atomic hydrogen, nitrogen and oxygen) in plasma. We further used our simulations to qualitatively explain (in terms of concentrations of the reactive species) the influence of SiH4/N2O gas-flow ratio and total gas pressure on film electrical properties and deposition rate.
    Original languageUndefined
    Article number10.1149/1.3207572
    Pages (from-to)23-32
    Number of pages10
    JournalECS transactions
    Volume25
    Issue number8
    DOIs
    Publication statusPublished - 2009

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • IR-67997
    • METIS-264031
    • EWI-16074

    Cite this

    @article{bd8d259b305b4213b69d789b8fe21e81,
    title = "Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling",
    abstract = "Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited a competitive performance. For better understanding of the influence of deposition parameters on both the deposition kinetics and oxide quality, we have modeled the Ar-SiH4-N2O plasma system with 173 chemical reactions. We simulated concentrations of 43 reactive species (such as e.g. SiHx radicals and SiHx + (x=0-3) ions, polysilanes, SiO, SiN, SiH3O, SiH2O, HSiO, etc., as well as atomic hydrogen, nitrogen and oxygen) in plasma. We further used our simulations to qualitatively explain (in terms of concentrations of the reactive species) the influence of SiH4/N2O gas-flow ratio and total gas pressure on film electrical properties and deposition rate.",
    keywords = "SC-ICF: Integrated Circuit Fabrication, IR-67997, METIS-264031, EWI-16074",
    author = "Kovalgin, {Alexeij Y.} and A. Boogaard and I. Brunets and Aarnink, {Antonius A.I.} and Wolters, {Robertus A.M.}",
    note = "10.1149/1.3207572",
    year = "2009",
    doi = "10.1149/1.3207572",
    language = "Undefined",
    volume = "25",
    pages = "23--32",
    journal = "ECS transactions",
    issn = "1938-5862",
    publisher = "The Electrochemical Society Inc.",
    number = "8",

    }

    Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling. / Kovalgin, Alexeij Y.; Boogaard, A.; Brunets, I.; Aarnink, Antonius A.I.; Wolters, Robertus A.M.

    In: ECS transactions, Vol. 25, No. 8, 10.1149/1.3207572, 2009, p. 23-32.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

    AU - Kovalgin, Alexeij Y.

    AU - Boogaard, A.

    AU - Brunets, I.

    AU - Aarnink, Antonius A.I.

    AU - Wolters, Robertus A.M.

    N1 - 10.1149/1.3207572

    PY - 2009

    Y1 - 2009

    N2 - Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited a competitive performance. For better understanding of the influence of deposition parameters on both the deposition kinetics and oxide quality, we have modeled the Ar-SiH4-N2O plasma system with 173 chemical reactions. We simulated concentrations of 43 reactive species (such as e.g. SiHx radicals and SiHx + (x=0-3) ions, polysilanes, SiO, SiN, SiH3O, SiH2O, HSiO, etc., as well as atomic hydrogen, nitrogen and oxygen) in plasma. We further used our simulations to qualitatively explain (in terms of concentrations of the reactive species) the influence of SiH4/N2O gas-flow ratio and total gas pressure on film electrical properties and deposition rate.

    AB - Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited a competitive performance. For better understanding of the influence of deposition parameters on both the deposition kinetics and oxide quality, we have modeled the Ar-SiH4-N2O plasma system with 173 chemical reactions. We simulated concentrations of 43 reactive species (such as e.g. SiHx radicals and SiHx + (x=0-3) ions, polysilanes, SiO, SiN, SiH3O, SiH2O, HSiO, etc., as well as atomic hydrogen, nitrogen and oxygen) in plasma. We further used our simulations to qualitatively explain (in terms of concentrations of the reactive species) the influence of SiH4/N2O gas-flow ratio and total gas pressure on film electrical properties and deposition rate.

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    KW - METIS-264031

    KW - EWI-16074

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    DO - 10.1149/1.3207572

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