Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

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    Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited a competitive performance. For better understanding of the influence of deposition parameters on both the deposition kinetics and oxide quality, we have modeled the Ar-SiH4-N2O plasma system with 173 chemical reactions. We simulated concentrations of 43 reactive species (such as e.g. SiHx radicals and SiHx + (x=0-3) ions, polysilanes, SiO, SiN, SiH3O, SiH2O, HSiO, etc., as well as atomic hydrogen, nitrogen and oxygen) in plasma. We further used our simulations to qualitatively explain (in terms of concentrations of the reactive species) the influence of SiH4/N2O gas-flow ratio and total gas pressure on film electrical properties and deposition rate.
    Original languageUndefined
    Article number10.1149/1.3207572
    Pages (from-to)23-32
    Number of pages10
    JournalECS transactions
    Issue number8
    Publication statusPublished - 2009


    • SC-ICF: Integrated Circuit Fabrication
    • IR-67997
    • METIS-264031
    • EWI-16074

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