Electrical properties of PMN-33PT thin film at MPB

R. Mackeviciute; R. Grigalaitis; J. Banys; M. Boota; A. Ghosh; G. Rijnders

doi:10.1080/00150193.2017.1355140

Electrical properties of PMN-33PT thin film at MPB

R. Mackeviciute^*, R. Grigalaitis, J. Banys, M. Boota, A. Ghosh, G. Rijnders

^*Corresponding author for this work

Inorganic Materials Science

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

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Abstract

This paper presents a systematic investigation of the electric properties of epitaxial PMN-33PT thin film as a function of temperature and frequency. Complex impedance measurements were performed over the temperature range of 30–500 K and frequency range 20 Hz–1 MHz. Obtained results were corrected for the SRO series resistance. Ferroelectric hysteresis loops and electric field tunability of the real part of dielectric permittivity were measured in the 300 K–450 K temperature range and at a frequency of 1 kHz. The results of electrical field tunability of complex dielectric permittivity were approximated by Landau-Ginsburg-Devonshire theory frame by the Johnson relation. Meanwhile, ferroelectric hysteresis loop measurements of epitaxial PMN-33PT thin film shows a good hysteresis property with a remnant polarization of 2P_r (Formula presented.) 10 µC/cm² and coercive field of 2E_c (Formula presented.) 12 kV/cm at temperature range from 300 K to 380 K.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Ferroelectrics
Volume	512
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2017.1355140
Publication status	Published - 19 May 2017

Keywords

electrical properties
MPB
PMN-33PT
22/4 OA procedure

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7-5-2018_ElectricalFinal published version, 1.06 MBLicence: Taverne

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title = "Electrical properties of PMN-33PT thin film at MPB",

abstract = "This paper presents a systematic investigation of the electric properties of epitaxial PMN-33PT thin film as a function of temperature and frequency. Complex impedance measurements were performed over the temperature range of 30–500 K and frequency range 20 Hz–1 MHz. Obtained results were corrected for the SRO series resistance. Ferroelectric hysteresis loops and electric field tunability of the real part of dielectric permittivity were measured in the 300 K–450 K temperature range and at a frequency of 1 kHz. The results of electrical field tunability of complex dielectric permittivity were approximated by Landau-Ginsburg-Devonshire theory frame by the Johnson relation. Meanwhile, ferroelectric hysteresis loop measurements of epitaxial PMN-33PT thin film shows a good hysteresis property with a remnant polarization of 2Pr (Formula presented.) 10 µC/cm2 and coercive field of 2Ec (Formula presented.) 12 kV/cm at temperature range from 300 K to 380 K.",

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author = "R. Mackeviciute and R. Grigalaitis and J. Banys and M. Boota and A. Ghosh and G. Rijnders",

note = "Proceedings of the Joint International 13th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity and 8th International Workshop on Relaxor Ferroelectrics (RCBJSF-IWRF 2016), Part II ",

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AU - Mackeviciute, R.

AU - Grigalaitis, R.

AU - Banys, J.

AU - Boota, M.

AU - Ghosh, A.

AU - Rijnders, G.

N1 - Proceedings of the Joint International 13th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity and 8th International Workshop on Relaxor Ferroelectrics (RCBJSF-IWRF 2016), Part II

PY - 2017/5/19

Y1 - 2017/5/19

N2 - This paper presents a systematic investigation of the electric properties of epitaxial PMN-33PT thin film as a function of temperature and frequency. Complex impedance measurements were performed over the temperature range of 30–500 K and frequency range 20 Hz–1 MHz. Obtained results were corrected for the SRO series resistance. Ferroelectric hysteresis loops and electric field tunability of the real part of dielectric permittivity were measured in the 300 K–450 K temperature range and at a frequency of 1 kHz. The results of electrical field tunability of complex dielectric permittivity were approximated by Landau-Ginsburg-Devonshire theory frame by the Johnson relation. Meanwhile, ferroelectric hysteresis loop measurements of epitaxial PMN-33PT thin film shows a good hysteresis property with a remnant polarization of 2Pr (Formula presented.) 10 µC/cm2 and coercive field of 2Ec (Formula presented.) 12 kV/cm at temperature range from 300 K to 380 K.

AB - This paper presents a systematic investigation of the electric properties of epitaxial PMN-33PT thin film as a function of temperature and frequency. Complex impedance measurements were performed over the temperature range of 30–500 K and frequency range 20 Hz–1 MHz. Obtained results were corrected for the SRO series resistance. Ferroelectric hysteresis loops and electric field tunability of the real part of dielectric permittivity were measured in the 300 K–450 K temperature range and at a frequency of 1 kHz. The results of electrical field tunability of complex dielectric permittivity were approximated by Landau-Ginsburg-Devonshire theory frame by the Johnson relation. Meanwhile, ferroelectric hysteresis loop measurements of epitaxial PMN-33PT thin film shows a good hysteresis property with a remnant polarization of 2Pr (Formula presented.) 10 µC/cm2 and coercive field of 2Ec (Formula presented.) 12 kV/cm at temperature range from 300 K to 380 K.

KW - electrical properties

KW - MPB

KW - PMN-33PT

KW - 22/4 OA procedure

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DO - 10.1080/00150193.2017.1355140

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SN - 0015-0193

VL - 512

SP - 1

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JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

ER -

Electrical properties of PMN-33PT thin film at MPB

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