Electrical properties of PMN-33PT thin film at MPB

R. Mackeviciute*, R. Grigalaitis, J. Banys, M. Boota, A. Ghosh, G. Rijnders

*Corresponding author for this work

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Abstract

This paper presents a systematic investigation of the electric properties of epitaxial PMN-33PT thin film as a function of temperature and frequency. Complex impedance measurements were performed over the temperature range of 30–500 K and frequency range 20 Hz–1 MHz. Obtained results were corrected for the SRO series resistance. Ferroelectric hysteresis loops and electric field tunability of the real part of dielectric permittivity were measured in the 300 K–450 K temperature range and at a frequency of 1 kHz. The results of electrical field tunability of complex dielectric permittivity were approximated by Landau-Ginsburg-Devonshire theory frame by the Johnson relation. Meanwhile, ferroelectric hysteresis loop measurements of epitaxial PMN-33PT thin film shows a good hysteresis property with a remnant polarization of 2Pr (Formula presented.) 10 µC/cm2 and coercive field of 2Ec (Formula presented.) 12 kV/cm at temperature range from 300 K to 380 K.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalFerroelectrics
Volume512
Issue number1
DOIs
Publication statusPublished - 19 May 2017

Keywords

  • electrical properties
  • MPB
  • PMN-33PT

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    Mackeviciute, R., Grigalaitis, R., Banys, J., Boota, M., Ghosh, A., & Rijnders, G. (2017). Electrical properties of PMN-33PT thin film at MPB. Ferroelectrics, 512(1), 1-7. https://doi.org/10.1080/00150193.2017.1355140