Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma

I.G. Isai; Alexeij Y. Kovalgin; J. Holleman; P.H. Woerlee; Hans Wallinga

Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma

I.G. Isai, Alexeij Y. Kovalgin, J. Holleman, P.H. Woerlee, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Thin Film Transistor Technologies VI
Subtitle of host publication	proceedings of the international symposium
Editors	Yue Kuo
Place of Publication	Pennington, NJ
Publisher	Electrochemical Society
Pages	190-197
Number of pages	8
ISBN (Print)	1-56677-385-7
Publication status	Published - 2003
Event	6th Symposium on Thin Film Transistor Technologies, TFTT 2002 - Salt Lake City, United States Duration: 21 Oct 2002 → 23 Oct 2002 Conference number: 6

Publication series

Name	Proceedings
Publisher	Electrochemical Society
Number	2002-23

Conference

Conference	6th Symposium on Thin Film Transistor Technologies, TFTT 2002
Abbreviated title	TFTT
Country/Territory	United States
City	Salt Lake City
Period	21/10/02 → 23/10/02

Keywords

METIS-214304

Cite this

Isai, I. G., Kovalgin, A. Y., Holleman, J., Woerlee, P. H., & Wallinga, H. (2003). Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. In Y. Kuo (Ed.), Thin Film Transistor Technologies VI: proceedings of the international symposium (pp. 190-197). (Proceedings; No. 2002-23). Electrochemical Society.

Isai, I.G. ; Kovalgin, Alexeij Y. ; Holleman, J. et al. / Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. Thin Film Transistor Technologies VI: proceedings of the international symposium. editor / Yue Kuo. Pennington, NJ : Electrochemical Society, 2003. pp. 190-197 (Proceedings; 2002-23).

@inproceedings{a4472200065843b88275899ac77edef3,

title = "Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma",

keywords = "METIS-214304",

author = "I.G. Isai and Kovalgin, {Alexeij Y.} and J. Holleman and P.H. Woerlee and Hans Wallinga",

year = "2003",

language = "English",

isbn = "1-56677-385-7",

series = "Proceedings",

publisher = "Electrochemical Society",

number = "2002-23",

pages = "190--197",

editor = "Yue Kuo",

booktitle = "Thin Film Transistor Technologies VI",

address = "United States",

note = "6th Symposium on Thin Film Transistor Technologies, TFTT 2002, TFTT ; Conference date: 21-10-2002 Through 23-10-2002",

}

Isai, IG, Kovalgin, AY, Holleman, J, Woerlee, PH & Wallinga, H 2003, Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. in Y Kuo (ed.), Thin Film Transistor Technologies VI: proceedings of the international symposium. Proceedings, no. 2002-23, Electrochemical Society, Pennington, NJ, pp. 190-197, 6th Symposium on Thin Film Transistor Technologies, TFTT 2002, Salt Lake City, Utah, United States, 21/10/02.

Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. / Isai, I.G.; Kovalgin, Alexeij Y.; Holleman, J. et al.
Thin Film Transistor Technologies VI: proceedings of the international symposium. ed. / Yue Kuo. Pennington, NJ: Electrochemical Society, 2003. p. 190-197 (Proceedings; No. 2002-23).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma

AU - Isai, I.G.

AU - Kovalgin, Alexeij Y.

AU - Holleman, J.

AU - Woerlee, P.H.

AU - Wallinga, Hans

N1 - Conference code: 6

PY - 2003

Y1 - 2003

KW - METIS-214304

M3 - Conference contribution

SN - 1-56677-385-7

T3 - Proceedings

SP - 190

EP - 197

BT - Thin Film Transistor Technologies VI

A2 - Kuo, Yue

PB - Electrochemical Society

CY - Pennington, NJ

T2 - 6th Symposium on Thin Film Transistor Technologies, TFTT 2002

Y2 - 21 October 2002 through 23 October 2002

ER -

Isai IG, Kovalgin AY, Holleman J, Woerlee PH, Wallinga H. Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. In Kuo Y, editor, Thin Film Transistor Technologies VI: proceedings of the international symposium. Pennington, NJ: Electrochemical Society. 2003. p. 190-197. (Proceedings; 2002-23).