Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma

I.G. Isai, Alexeij Y. Kovalgin, J. Holleman, P.H. Woerlee, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageEnglish
    Title of host publicationThin Film Transistor Technologies VI
    Subtitle of host publicationproceedings of the international symposium
    EditorsYue Kuo
    Place of PublicationPennington, NJ
    PublisherThe Electrochemical Society Inc.
    Pages190-197
    Number of pages8
    ISBN (Print)1-56677-385-7
    Publication statusPublished - 2003
    Event6th Symposium on Thin Film Transistor Technologies, TFTT 2002 - Salt Lake City, United States
    Duration: 21 Oct 200223 Oct 2002
    Conference number: 6

    Publication series

    NameProceedings
    PublisherElectrochemical Society
    Number2002-23

    Conference

    Conference6th Symposium on Thin Film Transistor Technologies, TFTT 2002
    Abbreviated titleTFTT
    CountryUnited States
    CitySalt Lake City
    Period21/10/0223/10/02

    Keywords

    • METIS-214304

    Cite this

    Isai, I. G., Kovalgin, A. Y., Holleman, J., Woerlee, P. H., & Wallinga, H. (2003). Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. In Y. Kuo (Ed.), Thin Film Transistor Technologies VI: proceedings of the international symposium (pp. 190-197). (Proceedings; No. 2002-23). Pennington, NJ: The Electrochemical Society Inc..