Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma

I.G. Isai, Alexeij Y. Kovalgin, J. Holleman, P.H. Woerlee, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageEnglish
    Title of host publicationThin Film Transistor Technologies VI
    Subtitle of host publicationproceedings of the international symposium
    EditorsYue Kuo
    Place of PublicationPennington, NJ
    PublisherThe Electrochemical Society Inc.
    Pages190-197
    Number of pages8
    ISBN (Print)1-56677-385-7
    Publication statusPublished - 2003
    Event6th Symposium on Thin Film Transistor Technologies, TFTT 2002 - Salt Lake City, United States
    Duration: 21 Oct 200223 Oct 2002
    Conference number: 6

    Publication series

    NameProceedings
    PublisherElectrochemical Society
    Number2002-23

    Conference

    Conference6th Symposium on Thin Film Transistor Technologies, TFTT 2002
    Abbreviated titleTFTT
    CountryUnited States
    CitySalt Lake City
    Period21/10/0223/10/02

    Keywords

    • METIS-214304

    Cite this

    Isai, I. G., Kovalgin, A. Y., Holleman, J., Woerlee, P. H., & Wallinga, H. (2003). Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. In Y. Kuo (Ed.), Thin Film Transistor Technologies VI: proceedings of the international symposium (pp. 190-197). (Proceedings; No. 2002-23). Pennington, NJ: The Electrochemical Society Inc..
    Isai, I.G. ; Kovalgin, Alexeij Y. ; Holleman, J. ; Woerlee, P.H. ; Wallinga, Hans. / Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. Thin Film Transistor Technologies VI: proceedings of the international symposium. editor / Yue Kuo. Pennington, NJ : The Electrochemical Society Inc., 2003. pp. 190-197 (Proceedings; 2002-23).
    @inproceedings{a4472200065843b88275899ac77edef3,
    title = "Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma",
    keywords = "METIS-214304",
    author = "I.G. Isai and Kovalgin, {Alexeij Y.} and J. Holleman and P.H. Woerlee and Hans Wallinga",
    year = "2003",
    language = "English",
    isbn = "1-56677-385-7",
    series = "Proceedings",
    publisher = "The Electrochemical Society Inc.",
    number = "2002-23",
    pages = "190--197",
    editor = "Yue Kuo",
    booktitle = "Thin Film Transistor Technologies VI",
    address = "United States",

    }

    Isai, IG, Kovalgin, AY, Holleman, J, Woerlee, PH & Wallinga, H 2003, Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. in Y Kuo (ed.), Thin Film Transistor Technologies VI: proceedings of the international symposium. Proceedings, no. 2002-23, The Electrochemical Society Inc., Pennington, NJ, pp. 190-197, 6th Symposium on Thin Film Transistor Technologies, TFTT 2002, Salt Lake City, United States, 21/10/02.

    Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. / Isai, I.G.; Kovalgin, Alexeij Y.; Holleman, J.; Woerlee, P.H.; Wallinga, Hans.

    Thin Film Transistor Technologies VI: proceedings of the international symposium. ed. / Yue Kuo. Pennington, NJ : The Electrochemical Society Inc., 2003. p. 190-197 (Proceedings; No. 2002-23).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma

    AU - Isai, I.G.

    AU - Kovalgin, Alexeij Y.

    AU - Holleman, J.

    AU - Woerlee, P.H.

    AU - Wallinga, Hans

    PY - 2003

    Y1 - 2003

    KW - METIS-214304

    M3 - Conference contribution

    SN - 1-56677-385-7

    T3 - Proceedings

    SP - 190

    EP - 197

    BT - Thin Film Transistor Technologies VI

    A2 - Kuo, Yue

    PB - The Electrochemical Society Inc.

    CY - Pennington, NJ

    ER -

    Isai IG, Kovalgin AY, Holleman J, Woerlee PH, Wallinga H. Electrical Properties of Room Temperature SiO2 Deposited by Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma. In Kuo Y, editor, Thin Film Transistor Technologies VI: proceedings of the international symposium. Pennington, NJ: The Electrochemical Society Inc. 2003. p. 190-197. (Proceedings; 2002-23).