Electrical resistivity and stoichiometry of KxC60, RbxC60, and CsxC60 films

R. C. Haddon*, A. S. Perel, R. C. Morris, S. H. Chang, A. T. Fiory, A. F. Hebard, T. T.M. Palstra, G. P. Kochanski

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

26 Citations (Scopus)
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Electrical resistance measurements as a function of stoichiometry have been carried out on KxC60, RbxC60 and CsxC60 thin films for 0<x<6. The annealed films show global resistance minima at K3C60, ρ{variant}min=4×10-3 Ω cm (60°C), Rb3C60, ρ{variant}min=4 × 10-3 Ω cm, and Cs1C60, ρ{variant}min=7 × 10-2 Ω cm. All of the annealed films show additional features in the vicinity of x=4, but the manifestation of the A4C60 phase (A=K, Rb, Cs), in transport studies is dependent on the metal and the annealing conditions. The A6C60 phase is apparent for all of the metals studied and shows a relatively high resistivity. The activation energies of the conduction process show well defined stationary points at K3C60 (not activated), Rb3C60 (not activated). Cs1C60 (minimum), Cs4C60 (maximum), with less distinct features between 4 < x < 6 in all cases.

Original languageEnglish
Pages (from-to)100-106
Number of pages7
JournalChemical physics letters
Issue number1-2
Publication statusPublished - 4 Feb 1994
Externally publishedYes


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