Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films

E.M.C.M. Reuvekamp; Yu.M. Boguslavskij; G.J. Gerritsma; M.A.J. Verhoeven; H.W. Zandbergen; Horst Rogalla

doi:10.1016/0925-8388(93)90820-D

Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films

E.M.C.M. Reuvekamp, Yu.M. Boguslavskij, G.J. Gerritsma, M.A.J. Verhoeven, H.W. Zandbergen, Horst Rogalla

Faculty of Science and Technology

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Abstract

In the past almost all studies on the anisotropy of the transport properties in 1-2-3 materials were performed on single crystals. This study is focused particularly on the anisotropy of the specific resistivity p as measured on almost single domain thin films of PrBa2Cu3-xGaxO7-y. Gallium doped PrBa2Cu3O7-y was deposited on (305) SrTiO3 to obtain (105) oriented, almost single domain thin films [1]. The films are deposited by rf magnetron sputtering in a one-step process, at low deposition rate. A relatively simple route for the preparation of single-phase gallium doped PrBa2Cu3O7-y target material by a citrate synthesis and pyrolysis [2] is presented.

Original language	English
Pages (from-to)	643-646
Number of pages	4
Journal	Journal of alloys and compounds
Volume	195
DOIs	https://doi.org/10.1016/0925-8388(93)90820-D
Publication status	Published - 1993
Event	E-MRS Fall Meeting 1992 - Strasbourg, France Duration: 3 Nov 1992 → 6 Nov 1992

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title = "Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films",

abstract = "In the past almost all studies on the anisotropy of the transport properties in 1-2-3 materials were performed on single crystals. This study is focused particularly on the anisotropy of the specific resistivity p as measured on almost single domain thin films of PrBa2Cu3-xGaxO7-y. Gallium doped PrBa2Cu3O7-y was deposited on (305) SrTiO3 to obtain (105) oriented, almost single domain thin films [1]. The films are deposited by rf magnetron sputtering in a one-step process, at low deposition rate. A relatively simple route for the preparation of single-phase gallium doped PrBa2Cu3O7-y target material by a citrate synthesis and pyrolysis [2] is presented.",

author = "E.M.C.M. Reuvekamp and Yu.M. Boguslavskij and G.J. Gerritsma and M.A.J. Verhoeven and H.W. Zandbergen and Horst Rogalla",

year = "1993",

doi = "10.1016/0925-8388(93)90820-D",

language = "English",

volume = "195",

pages = "643--646",

journal = "Journal of alloys and compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

note = "E-MRS Fall Meeting 1992 ; Conference date: 03-11-1992 Through 06-11-1992",

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TY - JOUR

T1 - Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films

AU - Reuvekamp, E.M.C.M.

AU - Boguslavskij, Yu.M.

AU - Gerritsma, G.J.

AU - Verhoeven, M.A.J.

AU - Zandbergen, H.W.

AU - Rogalla, Horst

PY - 1993

Y1 - 1993

N2 - In the past almost all studies on the anisotropy of the transport properties in 1-2-3 materials were performed on single crystals. This study is focused particularly on the anisotropy of the specific resistivity p as measured on almost single domain thin films of PrBa2Cu3-xGaxO7-y. Gallium doped PrBa2Cu3O7-y was deposited on (305) SrTiO3 to obtain (105) oriented, almost single domain thin films [1]. The films are deposited by rf magnetron sputtering in a one-step process, at low deposition rate. A relatively simple route for the preparation of single-phase gallium doped PrBa2Cu3O7-y target material by a citrate synthesis and pyrolysis [2] is presented.

AB - In the past almost all studies on the anisotropy of the transport properties in 1-2-3 materials were performed on single crystals. This study is focused particularly on the anisotropy of the specific resistivity p as measured on almost single domain thin films of PrBa2Cu3-xGaxO7-y. Gallium doped PrBa2Cu3O7-y was deposited on (305) SrTiO3 to obtain (105) oriented, almost single domain thin films [1]. The films are deposited by rf magnetron sputtering in a one-step process, at low deposition rate. A relatively simple route for the preparation of single-phase gallium doped PrBa2Cu3O7-y target material by a citrate synthesis and pyrolysis [2] is presented.

U2 - 10.1016/0925-8388(93)90820-D

DO - 10.1016/0925-8388(93)90820-D

M3 - Article

SN - 0925-8388

VL - 195

SP - 643

EP - 646

JO - Journal of alloys and compounds

JF - Journal of alloys and compounds

T2 - E-MRS Fall Meeting 1992

Y2 - 3 November 1992 through 6 November 1992

ER -

Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films

Abstract

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