Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films

E.M.C.M. Reuvekamp, Yu.M. Boguslavskij, G.J. Gerritsma, M.A.J. Verhoeven, H.W. Zandbergen, Horst Rogalla

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Abstract

In the past almost all studies on the anisotropy of the transport properties in 1-2-3 materials were performed on single crystals. This study is focused particularly on the anisotropy of the specific resistivity p as measured on almost single domain thin films of PrBa2Cu3-xGaxO7-y. Gallium doped PrBa2Cu3O7-y was deposited on (305) SrTiO3 to obtain (105) oriented, almost single domain thin films [1]. The films are deposited by rf magnetron sputtering in a one-step process, at low deposition rate. A relatively simple route for the preparation of single-phase gallium doped PrBa2Cu3O7-y target material by a citrate synthesis and pyrolysis [2] is presented.
Original languageEnglish
Pages (from-to)643-646
Number of pages4
JournalJournal of alloys and compounds
Volume195
DOIs
Publication statusPublished - 1993
EventE-MRS Fall Meeting 1992 - Strasbourg, France
Duration: 3 Nov 19926 Nov 1992

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