Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

Ray Hueting; Henk de Vries; Satadal  Dutta; Anne J. Annema

doi:10.1109/LED.2021.3087362

Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

Ray Hueting^*, Henk de Vries, Satadal Dutta, Anne J. Annema

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Abstract— The CMOS silicon avalanche-mode lightemitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption lowvoltage (≤15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes

Original language	English
Article number	9448033
Pages (from-to)	1188-1191
Number of pages	4
Journal	IEEE electron device letters
Volume	42
Issue number	8
Early online date	7 Jun 2021
DOIs	https://doi.org/10.1109/LED.2021.3087362
Publication status	Published - Aug 2021

Keywords

Avalanche breakdown
Diode
Light emitting diode
Power
silicon

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title = "Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED",

abstract = "Abstract— The CMOS silicon avalanche-mode lightemitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption lowvoltage (≤15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes ",

keywords = "Avalanche breakdown, Diode, Light emitting diode, Power, silicon",

author = "Ray Hueting and {de Vries}, Henk and Satadal Dutta and Annema, {Anne J.}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2021",

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doi = "10.1109/LED.2021.3087362",

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volume = "42",

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T1 - Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

AU - Hueting, Ray

AU - de Vries, Henk

AU - Dutta, Satadal

AU - Annema, Anne J.

PY - 2021/8

Y1 - 2021/8

N2 - Abstract— The CMOS silicon avalanche-mode lightemitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption lowvoltage (≤15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes

AB - Abstract— The CMOS silicon avalanche-mode lightemitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption lowvoltage (≤15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes

KW - Avalanche breakdown

KW - Diode

KW - Light emitting diode

KW - Power

KW - silicon

U2 - 10.1109/LED.2021.3087362

DO - 10.1109/LED.2021.3087362

M3 - Article

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Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

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