Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

Ray Hueting*, Henk de Vries, Satadal Dutta, Anne J. Annema

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract— The CMOS silicon avalanche-mode lightemitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption lowvoltage (≤15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes
Original languageEnglish
Article number9448033
Pages (from-to)1188-1191
Number of pages4
JournalIEEE electron device letters
Issue number8
Early online date7 Jun 2021
Publication statusPublished - Aug 2021


  • Avalanche breakdown
  • Diode
  • Light emitting diode
  • Power
  • silicon


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