Electrical test structures for verifying continuity of ultra-thin insulating and conducting films

Sourish  Banerjee; F.J. van der Velde; Mengdi  Yang; Jurriaan  Schmitz; Alexey Y. Kovalgin

doi:10.1109/ICMTS.2017.7954258

Electrical test structures for verifying continuity of ultra-thin insulating and conducting films

Sourish Banerjee, F.J. van der Velde, Mengdi Yang, Jurriaan Schmitz, Alexey Y. Kovalgin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.

Original language	English
Title of host publication	Electrical test structures for verifying continuity of ultra-thin insulating and conducting films
Place of Publication	New York
Publisher	IEEE
Pages	1-6
Number of pages	6
ISBN (Electronic)	978-1-5090-3615-8
ISBN (Print)	978-1-5090-3616-5
DOIs	https://doi.org/10.1109/ICMTS.2017.7954258
Publication status	Published - 28 Mar 2017
Event	30th International conference on Microelectronic Test Structures, ICMTS 2017 - Maison Minatec, Grenoble, France Duration: 28 Mar 2017 → 30 Mar 2017 Conference number: 30 http://icmts2017.insight-outside.fr/ http://www.homepages.ed.ac.uk/ajw/ICMTS/prog17.pdf

Conference

Conference	30th International conference on Microelectronic Test Structures, ICMTS 2017
Abbreviated title	ICMTS
Country/Territory	France
City	Grenoble
Period	28/03/17 → 30/03/17
Internet address	http://icmts2017.insight-outside.fr/ http://www.homepages.ed.ac.uk/ajw/ICMTS/prog17.pdf

Keywords

Films
aluminium compounds
III-V semiconductor materials
Electrodes
Annealing
Current density

Access to Document

10.1109/ICMTS.2017.7954258

Cite this

@inproceedings{29b72c73a44e482e9c68330aa4d81184,

title = "Electrical test structures for verifying continuity of ultra-thin insulating and conducting films",

abstract = "In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.",

keywords = "Films, aluminium compounds, III-V semiconductor materials, Electrodes, Annealing, Current density",

author = "Sourish Banerjee and {van der Velde}, F.J. and Mengdi Yang and Jurriaan Schmitz and Kovalgin, {Alexey Y.}",

year = "2017",

month = mar,

day = "28",

doi = "10.1109/ICMTS.2017.7954258",

language = "English",

isbn = "978-1-5090-3616-5 ",

pages = "1--6",

booktitle = "Electrical test structures for verifying continuity of ultra-thin insulating and conducting films",

publisher = "IEEE",

address = "United States",

note = "30th International conference on Microelectronic Test Structures, ICMTS 2017, ICMTS ; Conference date: 28-03-2017 Through 30-03-2017",

url = "http://icmts2017.insight-outside.fr/, http://www.homepages.ed.ac.uk/ajw/ICMTS/prog17.pdf",

}

Banerjee, S, van der Velde, FJ, Yang, M, Schmitz, J & Kovalgin, AY 2017, Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. in Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. IEEE, New York, pp. 1-6, 30th International conference on Microelectronic Test Structures, ICMTS 2017, Grenoble, France, 28/03/17. https://doi.org/10.1109/ICMTS.2017.7954258

Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. / Banerjee, Sourish ; van der Velde, F.J.; Yang, Mengdi et al.
Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. New York: IEEE, 2017. p. 1-6.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical test structures for verifying continuity of ultra-thin insulating and conducting films

AU - Banerjee, Sourish

AU - van der Velde, F.J.

AU - Yang, Mengdi

AU - Schmitz, Jurriaan

AU - Kovalgin, Alexey Y.

N1 - Conference code: 30

PY - 2017/3/28

Y1 - 2017/3/28

N2 - In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.

AB - In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.

KW - Films

KW - aluminium compounds

KW - III-V semiconductor materials

KW - Electrodes

KW - Annealing

KW - Current density

U2 - 10.1109/ICMTS.2017.7954258

DO - 10.1109/ICMTS.2017.7954258

M3 - Conference contribution

SN - 978-1-5090-3616-5

SP - 1

EP - 6

BT - Electrical test structures for verifying continuity of ultra-thin insulating and conducting films

PB - IEEE

CY - New York

T2 - 30th International conference on Microelectronic Test Structures, ICMTS 2017

Y2 - 28 March 2017 through 30 March 2017

ER -

Electrical test structures for verifying continuity of ultra-thin insulating and conducting films

Abstract

Conference

Keywords

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