Electrical test structures for verifying continuity of ultra-thin insulating and conducting films

Sourish Banerjee, F.J. van der Velde, Mengdi Yang, Jurriaan Schmitz, Alexey Y. Kovalgin

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.
    Original languageEnglish
    Title of host publicationElectrical test structures for verifying continuity of ultra-thin insulating and conducting films
    Place of PublicationNew York
    PublisherIEEE
    Pages1-6
    Number of pages6
    ISBN (Electronic)978-1-5090-3615-8
    ISBN (Print)978-1-5090-3616-5
    DOIs
    Publication statusPublished - 28 Mar 2017
    Event30th International conference on Microelectronic Test Structures, ICMTS 2017 - Maison Minatec, Grenoble, France
    Duration: 28 Mar 201730 Mar 2017
    Conference number: 30
    http://icmts2017.insight-outside.fr/
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog17.pdf

    Conference

    Conference30th International conference on Microelectronic Test Structures, ICMTS 2017
    Abbreviated titleICMTS
    CountryFrance
    CityGrenoble
    Period28/03/1730/03/17
    Internet address

    Fingerprint

    continuity
    conduction
    aluminum nitrides
    closures
    ellipsometry
    tungsten
    current density
    electrical resistivity

    Keywords

    • Films
    • aluminium compounds
    • III-V semiconductor materials
    • Electrodes
    • Annealing
    • Current density

    Cite this

    Banerjee, S., van der Velde, F. J., Yang, M., Schmitz, J., & Kovalgin, A. Y. (2017). Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. In Electrical test structures for verifying continuity of ultra-thin insulating and conducting films (pp. 1-6). New York: IEEE. https://doi.org/10.1109/ICMTS.2017.7954258
    Banerjee, Sourish ; van der Velde, F.J. ; Yang, Mengdi ; Schmitz, Jurriaan ; Kovalgin, Alexey Y. / Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. New York : IEEE, 2017. pp. 1-6
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    title = "Electrical test structures for verifying continuity of ultra-thin insulating and conducting films",
    abstract = "In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.",
    keywords = "Films, aluminium compounds, III-V semiconductor materials, Electrodes, Annealing, Current density",
    author = "Sourish Banerjee and {van der Velde}, F.J. and Mengdi Yang and Jurriaan Schmitz and Kovalgin, {Alexey Y.}",
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    publisher = "IEEE",
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    Banerjee, S, van der Velde, FJ, Yang, M, Schmitz, J & Kovalgin, AY 2017, Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. in Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. IEEE, New York, pp. 1-6, 30th International conference on Microelectronic Test Structures, ICMTS 2017, Grenoble, France, 28/03/17. https://doi.org/10.1109/ICMTS.2017.7954258

    Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. / Banerjee, Sourish ; van der Velde, F.J.; Yang, Mengdi ; Schmitz, Jurriaan ; Kovalgin, Alexey Y.

    Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. New York : IEEE, 2017. p. 1-6.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    AU - Banerjee, Sourish

    AU - van der Velde, F.J.

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    N2 - In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.

    AB - In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.

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    KW - aluminium compounds

    KW - III-V semiconductor materials

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    KW - Annealing

    KW - Current density

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    Banerjee S, van der Velde FJ, Yang M, Schmitz J, Kovalgin AY. Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. In Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. New York: IEEE. 2017. p. 1-6 https://doi.org/10.1109/ICMTS.2017.7954258