Electrical test structures for verifying continuity of ultra-thin insulating and conducting films

Sourish Banerjee, F.J. van der Velde, Mengdi Yang, Jurriaan Schmitz, Alexey Y. Kovalgin

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition to drastically reduced current density levels. For similar transformation of the W layer (occurring between 2-3 nm) the reverse transition was observed, which was accompanied by a rapid convergence of the film resistivity to the bulk value. The electrical analysis of film continuity was complemented optically by in-situ monitoring of the film growth and its closure, with the spectroscopic ellipsometry (SE) technique.
    Original languageEnglish
    Title of host publicationElectrical test structures for verifying continuity of ultra-thin insulating and conducting films
    Place of PublicationNew York
    PublisherIEEE
    Pages1-6
    Number of pages6
    ISBN (Electronic)978-1-5090-3615-8
    ISBN (Print)978-1-5090-3616-5
    DOIs
    Publication statusPublished - 28 Mar 2017
    Event30th International conference on Microelectronic Test Structures, ICMTS 2017 - Maison Minatec, Grenoble, France
    Duration: 28 Mar 201730 Mar 2017
    Conference number: 30
    http://icmts2017.insight-outside.fr/
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog17.pdf

    Conference

    Conference30th International conference on Microelectronic Test Structures, ICMTS 2017
    Abbreviated titleICMTS
    CountryFrance
    CityGrenoble
    Period28/03/1730/03/17
    Internet address

    Keywords

    • Films
    • aluminium compounds
    • III-V semiconductor materials
    • Electrodes
    • Annealing
    • Current density

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