Electrically active interface defects in the (100)Si/SiOx/HfO2/TiN system: Origin, instabilities and passivation

Paul K. Hurley, Karim Cherkaoui, Alfons Groenland

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600°C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900°C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550°C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900°C, 30s N2 RTA.
    Original languageEnglish
    Title of host publicationPhysics and Technology of High-k Gate Dielectrics 4
    EditorsS. Kar, M. Houssa, H. Iwai, S. De Gendt, D. Landheer, D. Misra
    Place of PublicationPennington, N.J.
    PublisherThe Electrochemical Society Inc.
    Number of pages14
    ISBN (Print)1-56677-503-5
    Publication statusPublished - 29 Oct 2006
    Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
    Duration: 29 Oct 20063 Nov 2006

    Publication series

    NameECS Transactions
    PublisherThe Electrochemical Society
    ISSN (Print)1938-5862


    Conference210th Electrochemical Society Meeting, ECS 2006
    Abbreviated titleECS 2006


    • SC-ICRY: Integrated Circuit Reliability and Yield


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