Electrically active interface defects in the (100)Si/SiOx/HfO2/TiN system: Origin, instabilities and passivation

Paul K. Hurley; Karim Cherkaoui; Alfons Groenland

doi:10.1149/1.2355702

Electrically active interface defects in the (100)Si/SiO_x/HfO₂/TiN system: Origin, instabilities and passivation

Paul K. Hurley, Karim Cherkaoui, Alfons Groenland

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

181 Downloads (Pure)

Abstract

An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600°C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900°C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550°C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900°C, 30s N2 RTA.

Original language	English
Title of host publication	Physics and Technology of High-k Gate Dielectrics 4
Editors	S. Kar, M. Houssa, H. Iwai, S. De Gendt, D. Landheer, D. Misra
Place of Publication	Pennington, N.J.
Publisher	Electrochemical Society
Pages	97-110
Number of pages	14
ISBN (Print)	1-56677-503-5
DOIs	https://doi.org/10.1149/1.2355702
Publication status	Published - 29 Oct 2006
Event	210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

Publication series

Name	ECS Transactions
Publisher	The Electrochemical Society
Number	3
Volume	3
ISSN (Print)	1938-5862

Conference

Conference	210th Electrochemical Society Meeting, ECS 2006
Abbreviated title	ECS 2006
Country/Territory	Mexico
City	Cancún
Period	29/10/06 → 3/11/06

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield

Access to Document

10.1149/1.2355702

Hurley2006electricallyAccepted author version, 292 KB

Cite this

Hurley, P. K., Cherkaoui, K., & Groenland, A. (2006). Electrically active interface defects in the (100)Si/SiO_x/HfO₂/TiN system: Origin, instabilities and passivation. In S. Kar, M. Houssa, H. Iwai, S. De Gendt, D. Landheer, & D. Misra (Eds.), Physics and Technology of High-k Gate Dielectrics 4 (pp. 97-110). (ECS Transactions; Vol. 3, No. 3). Electrochemical Society. https://doi.org/10.1149/1.2355702

Hurley, Paul K. ; Cherkaoui, Karim ; Groenland, Alfons. / Electrically active interface defects in the (100)Si/SiO_x/HfO₂/TiN system : Origin, instabilities and passivation. Physics and Technology of High-k Gate Dielectrics 4. editor / S. Kar ; M. Houssa ; H. Iwai ; S. De Gendt ; D. Landheer ; D. Misra. Pennington, N.J. : Electrochemical Society, 2006. pp. 97-110 (ECS Transactions; 3).

@inproceedings{5425c845db6142068f83d6a89a8d3f94,

title = "Electrically active interface defects in the (100)Si/SiOx/HfO2/TiN system: Origin, instabilities and passivation",

abstract = "An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600°C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900°C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550°C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900°C, 30s N2 RTA.",

keywords = "SC-ICRY: Integrated Circuit Reliability and Yield",

author = "Hurley, {Paul K.} and Karim Cherkaoui and Alfons Groenland",

year = "2006",

month = oct,

day = "29",

doi = "10.1149/1.2355702",

language = "English",

isbn = "1-56677-503-5",

series = "ECS Transactions",

publisher = "Electrochemical Society",

number = "3",

pages = "97--110",

editor = "S. Kar and M. Houssa and H. Iwai and {De Gendt}, S. and D. Landheer and D. Misra",

booktitle = "Physics and Technology of High-k Gate Dielectrics 4",

address = "United States",

note = "210th Electrochemical Society Meeting, ECS 2006, ECS 2006 ; Conference date: 29-10-2006 Through 03-11-2006",

}

Hurley, PK, Cherkaoui, K & Groenland, A 2006, Electrically active interface defects in the (100)Si/SiO_x/HfO₂/TiN system: Origin, instabilities and passivation. in S Kar, M Houssa, H Iwai, S De Gendt, D Landheer & D Misra (eds), Physics and Technology of High-k Gate Dielectrics 4. ECS Transactions, no. 3, vol. 3, Electrochemical Society, Pennington, N.J., pp. 97-110, 210th Electrochemical Society Meeting, ECS 2006, Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2355702

Electrically active interface defects in the (100)Si/SiO_x/HfO₂/TiN system: Origin, instabilities and passivation. / Hurley, Paul K.; Cherkaoui, Karim; Groenland, Alfons.
Physics and Technology of High-k Gate Dielectrics 4. ed. / S. Kar; M. Houssa; H. Iwai; S. De Gendt; D. Landheer; D. Misra. Pennington, N.J.: Electrochemical Society, 2006. p. 97-110 (ECS Transactions; Vol. 3, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrically active interface defects in the (100)Si/SiOx/HfO2/TiN system

T2 - 210th Electrochemical Society Meeting, ECS 2006

AU - Hurley, Paul K.

AU - Cherkaoui, Karim

AU - Groenland, Alfons

PY - 2006/10/29

Y1 - 2006/10/29

N2 - An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600°C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900°C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550°C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900°C, 30s N2 RTA.

AB - An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600°C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900°C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550°C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900°C, 30s N2 RTA.

KW - SC-ICRY: Integrated Circuit Reliability and Yield

U2 - 10.1149/1.2355702

DO - 10.1149/1.2355702

M3 - Conference contribution

SN - 1-56677-503-5

T3 - ECS Transactions

SP - 97

EP - 110

BT - Physics and Technology of High-k Gate Dielectrics 4

A2 - Kar, S.

A2 - Houssa, M.

A2 - Iwai, H.

A2 - De Gendt, S.

A2 - Landheer, D.

A2 - Misra, D.

PB - Electrochemical Society

CY - Pennington, N.J.

Y2 - 29 October 2006 through 3 November 2006

ER -

Hurley PK, Cherkaoui K, Groenland A. Electrically active interface defects in the (100)Si/SiO_x/HfO₂/TiN system: Origin, instabilities and passivation. In Kar S, Houssa M, Iwai H, De Gendt S, Landheer D, Misra D, editors, Physics and Technology of High-k Gate Dielectrics 4. Pennington, N.J.: Electrochemical Society. 2006. p. 97-110. (ECS Transactions; 3). doi: 10.1149/1.2355702