Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes

Marcus Freitag, James C. Tsang, John Kirtley, J.R. Kirtley, Autumn Carlsen, Jia Chen, A.G.P. Troeman, Johannes W.M. Hilgenkamp, Phaedon Avouris

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Carbon nanotube field-effect transistors (CNTFETs) produce band gap derived infrared emission under both ambipolar and unipolar transport conditions. We demonstrate here that heterogeneities/defects in the local environment of a CNTFET perturb the local potentials and, as a result, the characteristic bias dependent motion of the ambipolar light emission. Such defects can also introduce localized infrared emission due to impact excitation by carriers accelerated by a voltage drop at the defect. The correlation of the change in the motion of the ambipolar light emission and of the stationary electroluminescence with the electrical characteristics of the CNTFETs shows that stationary electroluminescence can identify "environmental defects" in carbon nanotubes and help evaluate their influence on electrical transport and device operation. A number of different defects are studied involving local dielectric environment changes (partially polymer-covered nanotubes), nanotube-nanotube contacts in looped nanotubes, and nanotube segments close to the electronic contacts. Random defects due to local charging are also observed.
Original languageUndefined
Pages (from-to)1425-
JournalNano letters
Volume6
Issue number7
DOIs
Publication statusPublished - 2006

Keywords

  • IR-59483
  • METIS-233492

Cite this

Freitag, M., Tsang, J. C., Kirtley, J., Kirtley, J. R., Carlsen, A., Chen, J., ... Avouris, P. (2006). Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes. Nano letters, 6(7), 1425-. https://doi.org/10.1021/nl060462w
Freitag, Marcus ; Tsang, James C. ; Kirtley, John ; Kirtley, J.R. ; Carlsen, Autumn ; Chen, Jia ; Troeman, A.G.P. ; Hilgenkamp, Johannes W.M. ; Avouris, Phaedon. / Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes. In: Nano letters. 2006 ; Vol. 6, No. 7. pp. 1425-.
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title = "Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes",
abstract = "Carbon nanotube field-effect transistors (CNTFETs) produce band gap derived infrared emission under both ambipolar and unipolar transport conditions. We demonstrate here that heterogeneities/defects in the local environment of a CNTFET perturb the local potentials and, as a result, the characteristic bias dependent motion of the ambipolar light emission. Such defects can also introduce localized infrared emission due to impact excitation by carriers accelerated by a voltage drop at the defect. The correlation of the change in the motion of the ambipolar light emission and of the stationary electroluminescence with the electrical characteristics of the CNTFETs shows that stationary electroluminescence can identify {"}environmental defects{"} in carbon nanotubes and help evaluate their influence on electrical transport and device operation. A number of different defects are studied involving local dielectric environment changes (partially polymer-covered nanotubes), nanotube-nanotube contacts in looped nanotubes, and nanotube segments close to the electronic contacts. Random defects due to local charging are also observed.",
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author = "Marcus Freitag and Tsang, {James C.} and John Kirtley and J.R. Kirtley and Autumn Carlsen and Jia Chen and A.G.P. Troeman and Hilgenkamp, {Johannes W.M.} and Phaedon Avouris",
year = "2006",
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language = "Undefined",
volume = "6",
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journal = "Nano letters",
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Freitag, M, Tsang, JC, Kirtley, J, Kirtley, JR, Carlsen, A, Chen, J, Troeman, AGP, Hilgenkamp, JWM & Avouris, P 2006, 'Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes', Nano letters, vol. 6, no. 7, pp. 1425-. https://doi.org/10.1021/nl060462w

Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes. / Freitag, Marcus; Tsang, James C.; Kirtley, John; Kirtley, J.R.; Carlsen, Autumn; Chen, Jia; Troeman, A.G.P.; Hilgenkamp, Johannes W.M.; Avouris, Phaedon.

In: Nano letters, Vol. 6, No. 7, 2006, p. 1425-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes

AU - Freitag, Marcus

AU - Tsang, James C.

AU - Kirtley, John

AU - Kirtley, J.R.

AU - Carlsen, Autumn

AU - Chen, Jia

AU - Troeman, A.G.P.

AU - Hilgenkamp, Johannes W.M.

AU - Avouris, Phaedon

PY - 2006

Y1 - 2006

N2 - Carbon nanotube field-effect transistors (CNTFETs) produce band gap derived infrared emission under both ambipolar and unipolar transport conditions. We demonstrate here that heterogeneities/defects in the local environment of a CNTFET perturb the local potentials and, as a result, the characteristic bias dependent motion of the ambipolar light emission. Such defects can also introduce localized infrared emission due to impact excitation by carriers accelerated by a voltage drop at the defect. The correlation of the change in the motion of the ambipolar light emission and of the stationary electroluminescence with the electrical characteristics of the CNTFETs shows that stationary electroluminescence can identify "environmental defects" in carbon nanotubes and help evaluate their influence on electrical transport and device operation. A number of different defects are studied involving local dielectric environment changes (partially polymer-covered nanotubes), nanotube-nanotube contacts in looped nanotubes, and nanotube segments close to the electronic contacts. Random defects due to local charging are also observed.

AB - Carbon nanotube field-effect transistors (CNTFETs) produce band gap derived infrared emission under both ambipolar and unipolar transport conditions. We demonstrate here that heterogeneities/defects in the local environment of a CNTFET perturb the local potentials and, as a result, the characteristic bias dependent motion of the ambipolar light emission. Such defects can also introduce localized infrared emission due to impact excitation by carriers accelerated by a voltage drop at the defect. The correlation of the change in the motion of the ambipolar light emission and of the stationary electroluminescence with the electrical characteristics of the CNTFETs shows that stationary electroluminescence can identify "environmental defects" in carbon nanotubes and help evaluate their influence on electrical transport and device operation. A number of different defects are studied involving local dielectric environment changes (partially polymer-covered nanotubes), nanotube-nanotube contacts in looped nanotubes, and nanotube segments close to the electronic contacts. Random defects due to local charging are also observed.

KW - IR-59483

KW - METIS-233492

U2 - 10.1021/nl060462w

DO - 10.1021/nl060462w

M3 - Article

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SP - 1425-

JO - Nano letters

JF - Nano letters

SN - 1530-6984

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Freitag M, Tsang JC, Kirtley J, Kirtley JR, Carlsen A, Chen J et al. Electrically Excited, Localized Infrared Emission from Single Carbon Nanotubes. Nano letters. 2006;6(7):1425-. https://doi.org/10.1021/nl060462w