Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World

B. Kaleli; Antonius A.I. Aarnink; Sander M. Smits; Raymond Josephus Engelbart Hueting; Robertus A.M. Wolters; Jurriaan Schmitz

Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World

B. Kaleli, Antonius A.I. Aarnink, Sander M. Smits, Raymond Josephus Engelbart Hueting, Robertus A.M. Wolters, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

1559 Downloads (Pure)

Abstract

In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.

Original language	Undefined
Title of host publication	Proceeding of STW.ICT Conference 2010
Place of Publication	Utrecht
Publisher	STW
Pages	105-108
Number of pages	4
ISBN (Print)	978-90-73461-67-3
Publication status	Published - 18 Nov 2010
Event	2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands Duration: 18 Nov 2010 → 19 Nov 2010 https://www.elis.ugent.be/en/project/og/cfp/2558

Publication series

Name
Publisher	Technology Foundation STW

Conference

Conference	2010 STW.ICT Conference on Research in Information and Communication Technology
Abbreviated title	STW.ICT 2010
Country/Territory	Netherlands
City	Veldhoven
Period	18/11/10 → 19/11/10
Internet address	https://www.elis.ugent.be/en/project/og/cfp/2558

Keywords

METIS-275945
FinFET
IR-76309
EWI-19751
Electron Beam Lithography
Silicon
HSQ
PMMA

Access to Document

kaleli

http://eprints.eemcs.utwente.nl/secure2/19751/01/kaleli.pdf

Cite this

@inproceedings{d3c8ede21efc481f93d55a58fa6b93f3,

title = "Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World",

abstract = "In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.",

keywords = "METIS-275945, FinFET, IR-76309, EWI-19751, Electron Beam Lithography, Silicon, HSQ, PMMA",

author = "B. Kaleli and Aarnink, {Antonius A.I.} and Smits, {Sander M.} and Hueting, {Raymond Josephus Engelbart} and Wolters, {Robertus A.M.} and Jurriaan Schmitz",

year = "2010",

month = nov,

day = "18",

language = "Undefined",

isbn = "978-90-73461-67-3",

publisher = "STW",

pages = "105--108",

booktitle = "Proceeding of STW.ICT Conference 2010",

note = "null ; Conference date: 18-11-2010 Through 19-11-2010",

url = "https://www.elis.ugent.be/en/project/og/cfp/2558",

}

Kaleli, B, Aarnink, AAI , Smits, SM , Hueting, RJE , Wolters, RAM & Schmitz, J 2010, Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World. in Proceeding of STW.ICT Conference 2010. STW, Utrecht, pp. 105-108, 2010 STW.ICT Conference on Research in Information and Communication Technology, Veldhoven, Netherlands, 18/11/10. <http://eprints.eemcs.utwente.nl/secure2/19751/01/kaleli.pdf>

TY - GEN

T1 - Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World

AU - Kaleli, B.

AU - Aarnink, Antonius A.I.

AU - Smits, Sander M.

AU - Hueting, Raymond Josephus Engelbart

AU - Wolters, Robertus A.M.

AU - Schmitz, Jurriaan

PY - 2010/11/18

Y1 - 2010/11/18

N2 - In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.

AB - In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.

KW - METIS-275945

KW - FinFET

KW - IR-76309

KW - EWI-19751

KW - Electron Beam Lithography

KW - Silicon

KW - HSQ

KW - PMMA

M3 - Conference contribution

SN - 978-90-73461-67-3

SP - 105

EP - 108

BT - Proceeding of STW.ICT Conference 2010

PB - STW

CY - Utrecht

Y2 - 18 November 2010 through 19 November 2010

ER -