Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World

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    Abstract

    In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.
    Original languageUndefined
    Title of host publicationProceeding of STW.ICT Conference 2010
    Place of PublicationUtrecht
    PublisherSTW
    Pages105-108
    Number of pages4
    ISBN (Print)978-90-73461-67-3
    Publication statusPublished - 18 Nov 2010
    Event2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands
    Duration: 18 Nov 201019 Nov 2010
    https://www.elis.ugent.be/en/project/og/cfp/2558

    Publication series

    Name
    PublisherTechnology Foundation STW

    Conference

    Conference2010 STW.ICT Conference on Research in Information and Communication Technology
    Abbreviated titleSTW.ICT 2010
    CountryNetherlands
    CityVeldhoven
    Period18/11/1019/11/10
    Internet address

    Keywords

    • METIS-275945
    • FinFET
    • IR-76309
    • EWI-19751
    • Electron Beam Lithography
    • Silicon
    • HSQ
    • PMMA

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