Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.
Original languageUndefined
Title of host publicationProceeding of STW.ICT Conference 2010
Place of PublicationUtrecht
PublisherSTW
Pages105-108
Number of pages4
ISBN (Print)978-90-73461-67-3
Publication statusPublished - 18 Nov 2010
Event2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands
Duration: 18 Nov 201019 Nov 2010
https://www.elis.ugent.be/en/project/og/cfp/2558

Publication series

Name
PublisherTechnology Foundation STW

Conference

Conference2010 STW.ICT Conference on Research in Information and Communication Technology
Abbreviated titleSTW.ICT 2010
CountryNetherlands
CityVeldhoven
Period18/11/1019/11/10
Internet address

Keywords

  • METIS-275945
  • FinFET
  • IR-76309
  • EWI-19751
  • Electron Beam Lithography
  • Silicon
  • HSQ
  • PMMA

Cite this

@inproceedings{d3c8ede21efc481f93d55a58fa6b93f3,
title = "Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World",
abstract = "In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.",
keywords = "METIS-275945, FinFET, IR-76309, EWI-19751, Electron Beam Lithography, Silicon, HSQ, PMMA",
author = "B. Kaleli and Aarnink, {Antonius A.I.} and Smits, {Sander M.} and Hueting, {Raymond Josephus Engelbart} and Wolters, {Robertus A.M.} and Jurriaan Schmitz",
year = "2010",
month = "11",
day = "18",
language = "Undefined",
isbn = "978-90-73461-67-3",
publisher = "STW",
pages = "105--108",
booktitle = "Proceeding of STW.ICT Conference 2010",

}

Kaleli, B, Aarnink, AAI, Smits, SM, Hueting, RJE, Wolters, RAM & Schmitz, J 2010, Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World. in Proceeding of STW.ICT Conference 2010. STW, Utrecht, pp. 105-108, 2010 STW.ICT Conference on Research in Information and Communication Technology, Veldhoven, Netherlands, 18/11/10.

Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World. / Kaleli, B.; Aarnink, Antonius A.I.; Smits, Sander M.; Hueting, Raymond Josephus Engelbart; Wolters, Robertus A.M.; Schmitz, Jurriaan.

Proceeding of STW.ICT Conference 2010. Utrecht : STW, 2010. p. 105-108.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World

AU - Kaleli, B.

AU - Aarnink, Antonius A.I.

AU - Smits, Sander M.

AU - Hueting, Raymond Josephus Engelbart

AU - Wolters, Robertus A.M.

AU - Schmitz, Jurriaan

PY - 2010/11/18

Y1 - 2010/11/18

N2 - In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.

AB - In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.

KW - METIS-275945

KW - FinFET

KW - IR-76309

KW - EWI-19751

KW - Electron Beam Lithography

KW - Silicon

KW - HSQ

KW - PMMA

M3 - Conference contribution

SN - 978-90-73461-67-3

SP - 105

EP - 108

BT - Proceeding of STW.ICT Conference 2010

PB - STW

CY - Utrecht

ER -