Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | Proceeding of STW.ICT Conference 2010 |
| Place of Publication | Utrecht |
| Publisher | STW |
| Pages | 105-108 |
| Number of pages | 4 |
| ISBN (Print) | 978-90-73461-67-3 |
| Publication status | Published - 18 Nov 2010 |
| Event | 2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands Duration: 18 Nov 2010 → 19 Nov 2010 https://www.elis.ugent.be/en/project/og/cfp/2558 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation STW |
Conference
| Conference | 2010 STW.ICT Conference on Research in Information and Communication Technology |
|---|---|
| Abbreviated title | STW.ICT 2010 |
| Country | Netherlands |
| City | Veldhoven |
| Period | 18/11/10 → 19/11/10 |
| Internet address |
Keywords
- METIS-275945
- FinFET
- IR-76309
- EWI-19751
- Electron Beam Lithography
- Silicon
- HSQ
- PMMA
Cite this
}
Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World. / Kaleli, B.; Aarnink, Antonius A.I.; Smits, Sander M.; Hueting, Raymond Josephus Engelbart; Wolters, Robertus A.M.; Schmitz, Jurriaan.
Proceeding of STW.ICT Conference 2010. Utrecht : STW, 2010. p. 105-108.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic
TY - GEN
T1 - Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World
AU - Kaleli, B.
AU - Aarnink, Antonius A.I.
AU - Smits, Sander M.
AU - Hueting, Raymond Josephus Engelbart
AU - Wolters, Robertus A.M.
AU - Schmitz, Jurriaan
PY - 2010/11/18
Y1 - 2010/11/18
N2 - In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.
AB - In this work we investigated the properties of HSQ and PMMA resists focusing on contrast and line width for ebeam lithography (EBL) application. HSQ was found to be a good candidate to have desired line widths but the contrast we obtained was less than it was for PMMA. Since the fluorine based plasma does not have high selectivity over exposed HSQ, we propose a PMMA/HSQ bi-layer resist stack as a hard mask to etch Si selectively. Using this technique, 50nm deep Si fins may be patterned.
KW - METIS-275945
KW - FinFET
KW - IR-76309
KW - EWI-19751
KW - Electron Beam Lithography
KW - Silicon
KW - HSQ
KW - PMMA
M3 - Conference contribution
SN - 978-90-73461-67-3
SP - 105
EP - 108
BT - Proceeding of STW.ICT Conference 2010
PB - STW
CY - Utrecht
ER -