Electron-hole confinement symmetry in silicon quantum dots

Filipp Müller, Georgios Konstantaras, Paul C. Spruijtenburg, Wilfred G. van der Wiel, Floris A. Zwanenburg

    Research output: Contribution to journalArticleAcademicpeer-review

    18 Citations (Scopus)
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    We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron−hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment.
    Original languageEnglish
    Pages (from-to)5336-5341
    Number of pages6
    JournalNano letters
    Publication statusPublished - 2 Jul 2015


    • Quantum information processing
    • Spin qubits
    • MOSFET
    • Silicon
    • Quantum dots
    • Ambipolar transport
    • 2023 OA procedure


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