Electron-hole confinement symmetry in silicon quantum dots

F. Müller, Filipp Mueller, Georgios Konstantaras, P.C. Spruijtenburg, Wilfred Gerard van der Wiel, Floris Arnoud Zwanenburg

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    14 Citations (Scopus)

    Abstract

    We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron−hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment.
    Original languageUndefined
    Pages (from-to)5336-5341
    Number of pages6
    JournalNano letters
    Volume15
    DOIs
    Publication statusPublished - 2 Jul 2015

    Keywords

    • EWI-26490
    • quantum information processing
    • spin qubits
    • MOSFET
    • IR-98409
    • Silicon
    • Quantum dots
    • METIS-315049
    • ambipolar transport

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