We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron−hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment.
- quantum information processing
- spin qubits
- Quantum dots
- ambipolar transport
Müller, F., Mueller, F., Konstantaras, G., Spruijtenburg, P. C., van der Wiel, W. G., & Zwanenburg, F. A. (2015). Electron-hole confinement symmetry in silicon quantum dots. Nano letters, 15, 5336-5341. https://doi.org/10.1021/acs.nanolett.5b01706