Electronegativity-dependent tin etching from thin films

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Abstract

The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.
Original languageEnglish
Article number075222
Number of pages9
JournalAIP advances
Volume6
Issue number7
DOIs
Publication statusPublished - 29 Jul 2016

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tin
etching
thin films
hydrogen
availability
conduction bands
electronic structure
shift
metals
electrons
energy

Keywords

  • IR-100901
  • METIS-317386

Cite this

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title = "Electronegativity-dependent tin etching from thin films",
abstract = "The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.",
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author = "Malgorzata Pachecka and Sturm, {Jacobus Marinus} and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and Lee, {Christopher James} and Frederik Bijkerk",
year = "2016",
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day = "29",
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language = "English",
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journal = "AIP advances",
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publisher = "American Institute of Physics",
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}

Electronegativity-dependent tin etching from thin films. / Pachecka, Malgorzata; Sturm, Jacobus Marinus; van de Kruijs, Robbert Wilhelmus Elisabeth; Lee, Christopher James; Bijkerk, Frederik.

In: AIP advances, Vol. 6, No. 7, 075222, 29.07.2016.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Electronegativity-dependent tin etching from thin films

AU - Pachecka, Malgorzata

AU - Sturm, Jacobus Marinus

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Lee, Christopher James

AU - Bijkerk, Frederik

PY - 2016/7/29

Y1 - 2016/7/29

N2 - The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

AB - The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

KW - IR-100901

KW - METIS-317386

U2 - 10.1063/1.4960429

DO - 10.1063/1.4960429

M3 - Article

VL - 6

JO - AIP advances

JF - AIP advances

SN - 2158-3226

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