Electronic conduction processes in SiO2 films obtained by ECR PECVD

I.G. Isai, J. Holleman, P.H. Woerlee, Hans Wallinga

    Research output: Contribution to conferencePaperAcademic

    Abstract

    Low temperature dielectrics are desired for realising thin-film-transistors on glass or plastic substrates. In the past silicon dioxide layers with stoichiometric composition and good electrical properties were deposited without substrate heating with an Electron Cyclotron Resonance Plasma source. This work is focused on determining the conduction mechanisms in the deposited films. The temperature dependence of the current density - electric field characteristics were studied and Fowler-Nordheim was found to be the dominant conduction mechanism in SiO2 films deposited with low silane flow and at low pressure. For higher silane flows and higher pressures, the current travels via traps in the oxide bandgap. Constant current stress measurements confirmed that low silane flow (5 sccm) and low pressure (4 mTorr) are ideal deposition conditions. For aluminium-gate capacitors with SiO2 deposited at optimised parameters, a charge to breakdown of 1 C/cm2 was found, comparable with the values obtained for thermally grown oxide.
    Original languageUndefined
    Pages76-81
    Number of pages6
    Publication statusPublished - 2001
    Event4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands
    Duration: 28 Nov 200130 Nov 2001

    Workshop

    Workshop4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
    CountryNetherlands
    CityVeldhoven
    Period28/11/0130/11/01

    Keywords

    • IR-67780
    • EWI-15628

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