Electronic properties of individual diarylethene molecules studies using scanning tunneling spectroscopy

T.C. Pijper; Tibor Kudernac; Nathalie Hélène Katsonis; M. van der Maas; B.L. Feringa; B. van Wees

doi:10.1063/1.4706568

Electronic properties of individual diarylethene molecules studies using scanning tunneling spectroscopy

T.C. Pijper
, Tibor Kudernac
, Nathalie Hélène Katsonis
, M. van der Maas
, B.L. Feringa
, B. van Wees

Research output: Contribution to journal › Article › Academic › peer-review

8 Citations (Scopus)

1 Downloads (Pure)

Abstract

The investigation of the electronic conduction through monosulfurdiarylethene (1S-DE) immobilized in an insulating dodecanethiol matrix on a goldsurface was addressed. Scanning tunnelingspectroscopy allows to probe spatially the frontier molecular orbitals of 1S-DE at 77 K. We locally extracted the electronic highest occupied molecular orbital-lowest unoccupied molecular orbital gap of 1S-DE with the value of 1.56 eV. This attempt reveals the importance of scanning tunnelingspectroscopy as a tool to measure the charge transport properties of diarylethene towards the realization of a switching-based molecular device.

Original language	Undefined
Article number	083716
Pages (from-to)	83716-1-083716-6
Number of pages	6
Journal	Journal of Applied Physics
Volume	111
Issue number	8
DOIs	https://doi.org/10.1063/1.4706568
Publication status	Published - 2012

Keywords

IR-85015
METIS-293502

Access to Document

10.1063/1.4706568

Cite this

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title = "Electronic properties of individual diarylethene molecules studies using scanning tunneling spectroscopy",

abstract = "The investigation of the electronic conduction through monosulfurdiarylethene (1S-DE) immobilized in an insulating dodecanethiol matrix on a goldsurface was addressed. Scanning tunnelingspectroscopy allows to probe spatially the frontier molecular orbitals of 1S-DE at 77 K. We locally extracted the electronic highest occupied molecular orbital-lowest unoccupied molecular orbital gap of 1S-DE with the value of 1.56 eV. This attempt reveals the importance of scanning tunnelingspectroscopy as a tool to measure the charge transport properties of diarylethene towards the realization of a switching-based molecular device.",

keywords = "IR-85015, METIS-293502",

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year = "2012",

doi = "10.1063/1.4706568",

language = "Undefined",

volume = "111",

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T1 - Electronic properties of individual diarylethene molecules studies using scanning tunneling spectroscopy

AU - Pijper, T.C.

AU - Kudernac, Tibor

AU - Katsonis, Nathalie Hélène

AU - van der Maas, M.

AU - Feringa, B.L.

AU - van Wees, B.

PY - 2012

Y1 - 2012

N2 - The investigation of the electronic conduction through monosulfurdiarylethene (1S-DE) immobilized in an insulating dodecanethiol matrix on a goldsurface was addressed. Scanning tunnelingspectroscopy allows to probe spatially the frontier molecular orbitals of 1S-DE at 77 K. We locally extracted the electronic highest occupied molecular orbital-lowest unoccupied molecular orbital gap of 1S-DE with the value of 1.56 eV. This attempt reveals the importance of scanning tunnelingspectroscopy as a tool to measure the charge transport properties of diarylethene towards the realization of a switching-based molecular device.

AB - The investigation of the electronic conduction through monosulfurdiarylethene (1S-DE) immobilized in an insulating dodecanethiol matrix on a goldsurface was addressed. Scanning tunnelingspectroscopy allows to probe spatially the frontier molecular orbitals of 1S-DE at 77 K. We locally extracted the electronic highest occupied molecular orbital-lowest unoccupied molecular orbital gap of 1S-DE with the value of 1.56 eV. This attempt reveals the importance of scanning tunnelingspectroscopy as a tool to measure the charge transport properties of diarylethene towards the realization of a switching-based molecular device.

KW - IR-85015

KW - METIS-293502

U2 - 10.1063/1.4706568

DO - 10.1063/1.4706568

M3 - Article

SN - 0021-8979

VL - 111

SP - 83716-1-083716-6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083716

ER -