Electronically coupled complementary interfaces between perovskite band insulators

Mark Huijben, Augustinus J.H.M. Rijnders, David H.A. Blank, Sara Bals, Sandra van Aert, Jo Verbeeck, Gustaav van Tendeloo, Alexander Brinkman, Johannes W.M. Hilgenkamp

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Abstract

Perovskite oxides exhibit a plethora of exceptional properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. For device applications, as well as for a basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely spaced complementary interfaces. Here we report the successful realization of such coupled interfaces in SrTiO3–LaAlO3 thin-film multilayer structures. We found a critical separation distance of six perovskite unit cell layers, corresponding to approximately 23 A˚ , below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate conducting interfaces are found to bemaintained in coupled structures down to subnanometre interface spacing.
Original languageEnglish
Pages (from-to)556-560
Number of pages5
JournalNature materials
Volume5
DOIs
Publication statusPublished - 2006

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Perovskite
Oxides
Carrier concentration
Multilayers
Energy gap
Cells
insulators
Thin films
laminates
spacing
perovskite
oxides
thin films
electronics

Keywords

  • METIS-233215
  • IR-59183

Cite this

@article{a0afeb4bde05442781117ffa02520119,
title = "Electronically coupled complementary interfaces between perovskite band insulators",
abstract = "Perovskite oxides exhibit a plethora of exceptional properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. For device applications, as well as for a basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely spaced complementary interfaces. Here we report the successful realization of such coupled interfaces in SrTiO3–LaAlO3 thin-film multilayer structures. We found a critical separation distance of six perovskite unit cell layers, corresponding to approximately 23 A˚ , below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate conducting interfaces are found to bemaintained in coupled structures down to subnanometre interface spacing.",
keywords = "METIS-233215, IR-59183",
author = "Mark Huijben and Rijnders, {Augustinus J.H.M.} and Blank, {David H.A.} and Sara Bals and {van Aert}, Sandra and Jo Verbeeck and {van Tendeloo}, Gustaav and Alexander Brinkman and Hilgenkamp, {Johannes W.M.}",
year = "2006",
doi = "10.1038/nmat1675",
language = "English",
volume = "5",
pages = "556--560",
journal = "Nature materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",

}

Electronically coupled complementary interfaces between perovskite band insulators. / Huijben, Mark; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Bals, Sara; van Aert, Sandra; Verbeeck, Jo; van Tendeloo, Gustaav; Brinkman, Alexander; Hilgenkamp, Johannes W.M.

In: Nature materials, Vol. 5, 2006, p. 556-560.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Electronically coupled complementary interfaces between perovskite band insulators

AU - Huijben, Mark

AU - Rijnders, Augustinus J.H.M.

AU - Blank, David H.A.

AU - Bals, Sara

AU - van Aert, Sandra

AU - Verbeeck, Jo

AU - van Tendeloo, Gustaav

AU - Brinkman, Alexander

AU - Hilgenkamp, Johannes W.M.

PY - 2006

Y1 - 2006

N2 - Perovskite oxides exhibit a plethora of exceptional properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. For device applications, as well as for a basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely spaced complementary interfaces. Here we report the successful realization of such coupled interfaces in SrTiO3–LaAlO3 thin-film multilayer structures. We found a critical separation distance of six perovskite unit cell layers, corresponding to approximately 23 A˚ , below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate conducting interfaces are found to bemaintained in coupled structures down to subnanometre interface spacing.

AB - Perovskite oxides exhibit a plethora of exceptional properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. For device applications, as well as for a basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely spaced complementary interfaces. Here we report the successful realization of such coupled interfaces in SrTiO3–LaAlO3 thin-film multilayer structures. We found a critical separation distance of six perovskite unit cell layers, corresponding to approximately 23 A˚ , below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate conducting interfaces are found to bemaintained in coupled structures down to subnanometre interface spacing.

KW - METIS-233215

KW - IR-59183

U2 - 10.1038/nmat1675

DO - 10.1038/nmat1675

M3 - Article

VL - 5

SP - 556

EP - 560

JO - Nature materials

JF - Nature materials

SN - 1476-1122

ER -