Electrostatic Doping and Devices

Raymond J.E. Hueting*, Gaurav Gupta

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

Abstract

Electrostatic doping is widely emerging as an alternative approach to overcome the limitations of traditional chemical doping to provide high charge carrier densities in nanometer-scale semiconductor devices. In this chapter (this work is partly based on Gupta et al. (IEEE Trans Electron Devices 64(8):3044–3055, 2017) and has been expanded with latest insights and developments), various reported approaches on electrostatic doping and related device architectures in different material systems are discussed. It is shown that for the induced electrostatic doping, the role of the metal workfunction, specific semiconductor properties (i.e., electron affinity and energy bandgap), the applied electric field, and the interplay between them are important. The effect of interface traps on the induced charge is also highlighted. In addition, both the performance benefits and major bottlenecks of electrostatic doping for potential future CMOS technology are discussed.

Original languageEnglish
Title of host publicationSpringer Handbook of Semiconductor Devices
EditorsMassimo Rudan, Rossella Brunetti, Susanna Reggiani
PublisherSpringer
Pages371-389
Number of pages19
ISBN (Electronic)978-3-030-79827-7
ISBN (Print)978-3-030-79826-0
DOIs
Publication statusPublished - 11 Nov 2022

Publication series

NameSpringer Handbooks
ISSN (Print)2522-8692
ISSN (Electronic)2522-8706

Keywords

  • NLA

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