@inbook{0b241ef537274a51a3332cb093e72592,
title = "Electrostatic Doping and Devices",
abstract = "Electrostatic doping is widely emerging as an alternative approach to overcome the limitations of traditional chemical doping to provide high charge carrier densities in nanometer-scale semiconductor devices. In this chapter (this work is partly based on Gupta et al. (IEEE Trans Electron Devices 64(8):3044–3055, 2017) and has been expanded with latest insights and developments), various reported approaches on electrostatic doping and related device architectures in different material systems are discussed. It is shown that for the induced electrostatic doping, the role of the metal workfunction, specific semiconductor properties (i.e., electron affinity and energy bandgap), the applied electric field, and the interplay between them are important. The effect of interface traps on the induced charge is also highlighted. In addition, both the performance benefits and major bottlenecks of electrostatic doping for potential future CMOS technology are discussed.",
keywords = "NLA",
author = "Hueting, {Raymond J.E.} and Gaurav Gupta",
note = "Funding Information: Acknowledgments This work was partly supported by the NWO Domain Applied and Engineering Sciences (TTW), the Netherlands (OTP 2014, under Project 13145.) The authors would like to thank Jurriaan Schmitz, Sander Smits, and Satadal Dutta for critically reading the original work [70] upon which this work is based. Bijoy Rajasekharan and Rob Wolters are kindly acknowledged for fruitful discussions and the fabrication of the charge plasma diode. Publisher Copyright: {\textcopyright} 2023, Springer Nature Switzerland AG.",
year = "2022",
month = nov,
day = "11",
doi = "10.1007/978-3-030-79827-7_11",
language = "English",
isbn = "978-3-030-79826-0",
series = "Springer Handbooks",
publisher = "Springer",
pages = "371--389",
editor = "Massimo Rudan and Rossella Brunetti and Susanna Reggiani",
booktitle = "Springer Handbook of Semiconductor Devices",
address = "Germany",
}