Electrothermal behavior of highly-symmetric three-finger bipolar transistors

L. La Spina*, V. d'Alessandro, S. Russo, N. Rinaldi, L.K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)


Design guidelines are established for improving the electrothermal stability of multifinger bipolar transistors as a result of experiments and simulations conducted on three-finger silicon-on-glass BJTs with selfheating and mutual thermal resistances varying over a large range of values, depending on silicon area, presence of heatspreaders, isolation and distance between the fingers. A rotational-symmetric topography that ensures a high level of symmetry between the individual emitters is proposed to achieve a significant enlargement of the safe operating area as compared to the more conventional parallel-finger designs.

Original languageEnglish
Title of host publication2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
Number of pages4
ISBN (Electronic)978-1-4244-4896-8
ISBN (Print)978-1-4244-4894-4
Publication statusPublished - 28 Dec 2009
Externally publishedYes
Event2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009 - Capri, Italy
Duration: 12 Oct 200914 Oct 2009

Publication series

NameBipolar - BICMOS Circuits and Technology Meeting. Proceedings
ISSN (Print)1088-9299


Conference2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
Abbreviated titleBCTM 2009


  • Aluminum nitride (AlN)
  • Bipolar junction transistors (BJTs)
  • Electrothermal effects
  • Heatspreaders
  • Multifinger device
  • Safe operating area
  • Selfheating
  • Silicon-on-glass (SOG)
  • Thermal resistance

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