@inproceedings{ab573738d0004726bfe0ba65c97f67ae,
title = "Electrothermal behavior of highly-symmetric three-finger bipolar transistors",
abstract = "Design guidelines are established for improving the electrothermal stability of multifinger bipolar transistors as a result of experiments and simulations conducted on three-finger silicon-on-glass BJTs with selfheating and mutual thermal resistances varying over a large range of values, depending on silicon area, presence of heatspreaders, isolation and distance between the fingers. A rotational-symmetric topography that ensures a high level of symmetry between the individual emitters is proposed to achieve a significant enlargement of the safe operating area as compared to the more conventional parallel-finger designs.",
keywords = "Aluminum nitride (AlN), Bipolar junction transistors (BJTs), Electrothermal effects, Heatspreaders, Multifinger device, Safe operating area, Selfheating, Silicon-on-glass (SOG), Thermal resistance",
author = "{La Spina}, L. and V. d'Alessandro and S. Russo and N. Rinaldi and L.K. Nanver",
year = "2009",
month = dec,
day = "28",
doi = "10.1109/BIPOL.2009.5314145",
language = "English",
isbn = "978-1-4244-4894-4",
series = "Bipolar - BICMOS Circuits and Technology Meeting. Proceedings ",
publisher = "IEEE",
pages = "21--24",
booktitle = "2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009",
address = "United States",
note = "2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009, BCTM 2009 ; Conference date: 12-10-2009 Through 14-10-2009",
}