Electrothermal characterization of silicon-on-glass VDMOSFETs

N. Nenadović*, H. Schellevis, V. Cuoco, A. Griffo, S.J.C.H. Theeuwen, L.K. Nanver, H.F.F. Jos, J.W. Slotboom

*Corresponding author for this work

Research output: Contribution to conferencePaperAcademicpeer-review


In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

Original languageEnglish
Number of pages4
Publication statusPublished - 28 Jul 2004
Externally publishedYes
Event24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia
Duration: 16 May 200419 May 2004
Conference number: 24


Conference24th International Conference on Microelectronics, MIEL 2004
Abbreviated titleMIEL 2004

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