Electrothermal characterization of silicon-on-glass VDMOSFETs

N. Nenadović, H. Schellevis, V. Cuoco, A. Griffo, S. J.C.H. Theeuwen, L. K. Nanver, H. F.F. Jos, J. W. Slotboom

Research output: Contribution to conferencePaperAcademicpeer-review

Abstract

In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

Original languageEnglish
Pages145-148
Number of pages4
Publication statusPublished - 28 Jul 2004
Externally publishedYes
Event24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia
Duration: 16 May 200419 May 2004
Conference number: 24

Conference

Conference24th International Conference on Microelectronics, MIEL 2004
Abbreviated titleMIEL 2004
CountrySerbia
CityNis
Period16/05/0419/05/04

Fingerprint

Glass
Silicon
Polychlorinated biphenyls
Heat resistance
Transistors
Thermodynamic stability
Feedback
Hot Temperature

Cite this

Nenadović, N., Schellevis, H., Cuoco, V., Griffo, A., Theeuwen, S. J. C. H., Nanver, L. K., ... Slotboom, J. W. (2004). Electrothermal characterization of silicon-on-glass VDMOSFETs. 145-148. Paper presented at 24th International Conference on Microelectronics, MIEL 2004, Nis, Serbia.
Nenadović, N. ; Schellevis, H. ; Cuoco, V. ; Griffo, A. ; Theeuwen, S. J.C.H. ; Nanver, L. K. ; Jos, H. F.F. ; Slotboom, J. W. / Electrothermal characterization of silicon-on-glass VDMOSFETs. Paper presented at 24th International Conference on Microelectronics, MIEL 2004, Nis, Serbia.4 p.
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title = "Electrothermal characterization of silicon-on-glass VDMOSFETs",
abstract = "In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.",
author = "N. Nenadović and H. Schellevis and V. Cuoco and A. Griffo and Theeuwen, {S. J.C.H.} and Nanver, {L. K.} and Jos, {H. F.F.} and Slotboom, {J. W.}",
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pages = "145--148",
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Nenadović, N, Schellevis, H, Cuoco, V, Griffo, A, Theeuwen, SJCH, Nanver, LK, Jos, HFF & Slotboom, JW 2004, 'Electrothermal characterization of silicon-on-glass VDMOSFETs' Paper presented at 24th International Conference on Microelectronics, MIEL 2004, Nis, Serbia, 16/05/04 - 19/05/04, pp. 145-148.

Electrothermal characterization of silicon-on-glass VDMOSFETs. / Nenadović, N.; Schellevis, H.; Cuoco, V.; Griffo, A.; Theeuwen, S. J.C.H.; Nanver, L. K.; Jos, H. F.F.; Slotboom, J. W.

2004. 145-148 Paper presented at 24th International Conference on Microelectronics, MIEL 2004, Nis, Serbia.

Research output: Contribution to conferencePaperAcademicpeer-review

TY - CONF

T1 - Electrothermal characterization of silicon-on-glass VDMOSFETs

AU - Nenadović, N.

AU - Schellevis, H.

AU - Cuoco, V.

AU - Griffo, A.

AU - Theeuwen, S. J.C.H.

AU - Nanver, L. K.

AU - Jos, H. F.F.

AU - Slotboom, J. W.

PY - 2004/7/28

Y1 - 2004/7/28

N2 - In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

AB - In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

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M3 - Paper

SP - 145

EP - 148

ER -

Nenadović N, Schellevis H, Cuoco V, Griffo A, Theeuwen SJCH, Nanver LK et al. Electrothermal characterization of silicon-on-glass VDMOSFETs. 2004. Paper presented at 24th International Conference on Microelectronics, MIEL 2004, Nis, Serbia.