Electrothermal characterization of silicon-on-glass VDMOSFETs

N. Nenadović*, H. Schellevis, V. Cuoco, A. Griffo, S. J.C.H. Theeuwen, L. K. Nanver, H. F.F. Jos, J. W. Slotboom

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

Original languageEnglish
Pages145-148
Number of pages4
Publication statusPublished - 28 Jul 2004
Externally publishedYes
Event24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia
Duration: 16 May 200419 May 2004
Conference number: 24

Conference

Conference24th International Conference on Microelectronics, MIEL 2004
Abbreviated titleMIEL 2004
CountrySerbia
CityNis
Period16/05/0419/05/04

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    Nenadović, N., Schellevis, H., Cuoco, V., Griffo, A., Theeuwen, S. J. C. H., Nanver, L. K., ... Slotboom, J. W. (2004). Electrothermal characterization of silicon-on-glass VDMOSFETs. 145-148. Paper presented at 24th International Conference on Microelectronics, MIEL 2004, Nis, Serbia.