Electrothermal characterization of silicon-on-glass VDMOSFETs

N. Nenadović; H. Schellevis; V. Cuoco; A. Griffo; S.J.C.H. Theeuwen; L.K. Nanver; H.F.F. Jos; J.W. Slotboom

Electrothermal characterization of silicon-on-glass VDMOSFETs

N. Nenadović^*, H. Schellevis, V. Cuoco, A. Griffo, S.J.C.H. Theeuwen, L.K. Nanver, H.F.F. Jos, J.W. Slotboom

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of R_TH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

Original language	English
Pages	145-148
Number of pages	4
Publication status	Published - 28 Jul 2004
Externally published	Yes
Event	24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia Duration: 16 May 2004 → 19 May 2004 Conference number: 24

Conference

Conference	24th International Conference on Microelectronics, MIEL 2004
Abbreviated title	MIEL 2004
Country/Territory	Serbia
City	Nis
Period	16/05/04 → 19/05/04

Cite this

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title = "Electrothermal characterization of silicon-on-glass VDMOSFETs",

abstract = "In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.",

author = "N. Nenadovi{\'c} and H. Schellevis and V. Cuoco and A. Griffo and S.J.C.H. Theeuwen and L.K. Nanver and H.F.F. Jos and J.W. Slotboom",

year = "2004",

month = jul,

day = "28",

language = "English",

pages = "145--148",

note = "24th International Conference on Microelectronics, MIEL 2004, MIEL 2004 ; Conference date: 16-05-2004 Through 19-05-2004",

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TY - CONF

T1 - Electrothermal characterization of silicon-on-glass VDMOSFETs

AU - Nenadović, N.

AU - Schellevis, H.

AU - Cuoco, V.

AU - Griffo, A.

AU - Theeuwen, S.J.C.H.

AU - Nanver, L.K.

AU - Jos, H.F.F.

AU - Slotboom, J.W.

N1 - Conference code: 24

PY - 2004/7/28

Y1 - 2004/7/28

N2 - In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

AB - In this paper silicon-on-glass VDMOSFETs are electrotherinally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of RTH are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 μm.

UR - https://www.scopus.com/pages/publications/3142717373

M3 - Paper

AN - SCOPUS:3142717373

SP - 145

EP - 148

T2 - 24th International Conference on Microelectronics, MIEL 2004

Y2 - 16 May 2004 through 19 May 2004

ER -

Electrothermal characterization of silicon-on-glass VDMOSFETs

Abstract

Conference

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