Abstract
The electrothermal behavior of bipolar differential pairs fabricated in silicon-on-glass technology is investigated. Experimental results demonstrate that a considerable distortion of the characteristics may occur when the individual transistors are sensitive to electrothermal effects, with consequent performance and reliability reduction. Simulations are employed to support the measurements and to examine methods to reduce the electrothermal feedback.
Original language | English |
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Title of host publication | Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
Pages | 131-134 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Dec 2007 |
Externally published | Yes |
Event | IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007 - Boston, MA, United States Duration: 30 Sept 2007 → 2 Oct 2007 https://bcicts.org/ |
Conference
Conference | IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007 |
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Abbreviated title | BCTM 2007 |
Country/Territory | United States |
City | Boston, MA |
Period | 30/09/07 → 2/10/07 |
Internet address |
Keywords
- Analog circuits
- Bipolar Junction Transistor (BJT)
- Differential pair
- Electrothermal analysis
- Silicon-on-glass
- Thermal instability