Electrothermal limitations on the current density of high-frequency bipolar transistors

Nebojša Nenadović; Lis K. Nanver; Jan W. Slotboom

doi:10.1109/TED.2004.839754

Electrothermal limitations on the current density of high-frequency bipolar transistors

Nebojša Nenadović^*, Lis K. Nanver, Jan W. Slotboom

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

18 Citations (Scopus)

Abstract

In this paper, electrothermal consequences of down-scaling bipolar transistors, reducing the emitter resistance and implementing substrate modifications are examined by means of electrical measurements, numerical simulations and analytical calculations. A formulation is given for the optimum current density that can be run through the device and still maintain both sufficient transconductance and thermal stability. This expression sets a theoretical limit on the current density and therefore also on the speed of the given technology node. Particularly the lowering of the emitter resistivity is a trade-off between transconductance and thermal stability, and the optimum choice can be estimated from these results along with the maximum emitter area that will allow unconditional thermal stability.

Original language	English
Pages (from-to)	2175-2180
Number of pages	6
Journal	IEEE transactions on electron devices
Volume	51
Issue number	12
DOIs	https://doi.org/10.1109/TED.2004.839754
Publication status	Published - 1 Dec 2004
Externally published	Yes

Keywords

Bipolar transistors
Emitter resistance
High-frequency (HF) technologies
Silicon-on-glass
Thermal instability

Access to Document

10.1109/TED.2004.839754

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@article{4b1c632cad79435f8d81cb54e2862308,

title = "Electrothermal limitations on the current density of high-frequency bipolar transistors",

abstract = "In this paper, electrothermal consequences of down-scaling bipolar transistors, reducing the emitter resistance and implementing substrate modifications are examined by means of electrical measurements, numerical simulations and analytical calculations. A formulation is given for the optimum current density that can be run through the device and still maintain both sufficient transconductance and thermal stability. This expression sets a theoretical limit on the current density and therefore also on the speed of the given technology node. Particularly the lowering of the emitter resistivity is a trade-off between transconductance and thermal stability, and the optimum choice can be estimated from these results along with the maximum emitter area that will allow unconditional thermal stability.",

keywords = "Bipolar transistors, Emitter resistance, High-frequency (HF) technologies, Silicon-on-glass, Thermal instability",

author = "Neboj{\v s}a Nenadovi{\'c} and Nanver, {Lis K.} and Slotboom, {Jan W.}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/TED.2004.839754",

language = "English",

volume = "51",

pages = "2175--2180",

journal = "IEEE transactions on electron devices",

issn = "0018-9383",

publisher = "IEEE",

number = "12",

}

TY - JOUR

T1 - Electrothermal limitations on the current density of high-frequency bipolar transistors

AU - Nenadović, Nebojša

AU - Nanver, Lis K.

AU - Slotboom, Jan W.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - In this paper, electrothermal consequences of down-scaling bipolar transistors, reducing the emitter resistance and implementing substrate modifications are examined by means of electrical measurements, numerical simulations and analytical calculations. A formulation is given for the optimum current density that can be run through the device and still maintain both sufficient transconductance and thermal stability. This expression sets a theoretical limit on the current density and therefore also on the speed of the given technology node. Particularly the lowering of the emitter resistivity is a trade-off between transconductance and thermal stability, and the optimum choice can be estimated from these results along with the maximum emitter area that will allow unconditional thermal stability.

AB - In this paper, electrothermal consequences of down-scaling bipolar transistors, reducing the emitter resistance and implementing substrate modifications are examined by means of electrical measurements, numerical simulations and analytical calculations. A formulation is given for the optimum current density that can be run through the device and still maintain both sufficient transconductance and thermal stability. This expression sets a theoretical limit on the current density and therefore also on the speed of the given technology node. Particularly the lowering of the emitter resistivity is a trade-off between transconductance and thermal stability, and the optimum choice can be estimated from these results along with the maximum emitter area that will allow unconditional thermal stability.

KW - Bipolar transistors

KW - Emitter resistance

KW - High-frequency (HF) technologies

KW - Silicon-on-glass

KW - Thermal instability

UR - http://www.scopus.com/inward/record.url?scp=10644258014&partnerID=8YFLogxK

U2 - 10.1109/TED.2004.839754

DO - 10.1109/TED.2004.839754

M3 - Article

AN - SCOPUS:10644258014

VL - 51

SP - 2175

EP - 2180

JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

SN - 0018-9383

IS - 12

ER -