Electrothermal limitations on the current density of high-frequency bipolar transistors

N. Nenadović*, L. K. Nanver, J. W. Slotboom

*Corresponding author for this work

Research output: Contribution to conferencePaperAcademicpeer-review

Abstract

In this paper electrothermal consequences of downscaling bipolar transistors, reducing the emitter resistance and implementing substrate modifications are examined by means of electrical measurements, numerical simulations and analytical calculations. A formulation is given for the optimum current density that can be run through the device and still maintain both sufficient transconductance and thermal stability. This expression sets a theoretical limit on the current density and therefore also on the speed of the given technology node. Particularly the lowering of the emitter resistivity is a tradeoff between transconductance and thermal stability, and the optimum choice can be estimated from these results along with the maximum emitter area that will allow unconditional thermal stability.

Original languageEnglish
Pages3-8
Number of pages6
Publication statusPublished - 1 Dec 2004
Externally publishedYes
Event19th International Symposium on Microelectronis Technology and Devices SBMICRO 2004 - Pernambuco, Brazil
Duration: 7 Sep 200411 Sep 2004
Conference number: 19

Conference

Conference19th International Symposium on Microelectronis Technology and Devices SBMICRO 2004
Abbreviated titleSBMicro 2004
CountryBrazil
CityPernambuco
Period7/09/0411/09/04

Fingerprint Dive into the research topics of 'Electrothermal limitations on the current density of high-frequency bipolar transistors'. Together they form a unique fingerprint.

Cite this