Electrothermal stability of bipolar transistors at medium- and high-current operation regimes

N. Nenadović*, L. La Spina, V. D'Alessandro, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Electrothermal behavior of single- and two-finger bipolar transistors at medium and high-current operation is examined thoroughly and described by novel analytical formulations. Combined effects are identified that are responsible for thermally (re)stabilizing Si-and SiGe-base devices.

Original languageEnglish
Title of host publicationProceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005
Pages45-49
Number of pages5
DOIs
Publication statusPublished - 30 Nov 2005
Externally publishedYes
EventIEEE Bipolar/BiCMOS Circuits and Technology Meeting 2005 - Santa Barbara, United States
Duration: 9 Oct 200511 Oct 2005

Conference

ConferenceIEEE Bipolar/BiCMOS Circuits and Technology Meeting 2005
Abbreviated titleBCTM 2005
CountryUnited States
CitySanta Barbara
Period9/10/0511/10/05

Keywords

  • Bipolar devices
  • Bipolar modeling and simulation
  • Electrothermal behavior
  • Electrothermal stability
  • Safe operating area
  • Silicon process technology

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  • Cite this

    Nenadović, N., La Spina, L., D'Alessandro, V., & Nanver, L. K. (2005). Electrothermal stability of bipolar transistors at medium- and high-current operation regimes. In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 (pp. 45-49) https://doi.org/10.1109/BIPOL.2005.1555198