Electrothermomigration-induced failure in power IC metallization

Van Hieu Nguyen, Cora Salm, B.H. Krabbenborg, B.H. Krabbenborg, J. Bisschop, A.J. Mouthaan, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.
    Original languageUndefined
    Title of host publicationProceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages622-630
    Number of pages9
    ISBN (Print)90-73461-39-1
    Publication statusPublished - Nov 2003
    Event6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands
    Duration: 25 Nov 200326 Nov 2003
    Conference number: 6

    Publication series

    Name
    PublisherSTW Technology Foundation

    Conference

    Conference6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period25/11/0326/11/03

    Keywords

    • Temperature gradient
    • IR-67744
    • Electromigration
    • EWI-15567
    • Metallization
    • Thermomigration
    • Power IC
    • METIS-213259

    Cite this

    Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J., & Kuper, F. G. (2003). Electrothermomigration-induced failure in power IC metallization. In Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 (pp. 622-630). Utrecht, The Netherlands: STW.