Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.
|Title of host publication||Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||9|
|Publication status||Published - Nov 2003|
|Event||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands|
Duration: 25 Nov 2003 → 26 Nov 2003
Conference number: 6
|Publisher||STW Technology Foundation|
|Conference||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003|
|Period||25/11/03 → 26/11/03|
- Temperature gradient
- Power IC
Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J., & Kuper, F. G. (2003). Electrothermomigration-induced failure in power IC metallization. In Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 (pp. 622-630). Utrecht, The Netherlands: STW.