Electrothermomigration-induced failure in power IC metallization

H.V. Nguyen; C. Salm; B. Krabbenborg; J. Bisschop; A.J. Mouthaan; F.G. Kuper

Electrothermomigration-induced failure in power IC metallization

H.V. Nguyen, C. Salm, B. Krabbenborg, J. Bisschop, A.J. Mouthaan, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.

Original language	English
Title of host publication	Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	622-630
Number of pages	9
ISBN (Print)	90-73461-39-1
Publication status	Published - Nov 2003
Event	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003 Conference number: 6

Conference

Conference	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/03 → 26/11/03

Keywords

Temperature gradient
Electromigration
Metallization
Thermomigration
Power IC

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@inproceedings{9c8146e743a84f26bd9d8fa5eed3d4f9,

title = "Electrothermomigration-induced failure in power IC metallization",

abstract = "Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.",

keywords = "Temperature gradient, Electromigration, Metallization, Thermomigration, Power IC",

author = "H.V. Nguyen and C. Salm and B. Krabbenborg and J. Bisschop and A.J. Mouthaan and F.G. Kuper",

year = "2003",

month = nov,

language = "English",

isbn = "90-73461-39-1",

pages = "622--630",

booktitle = "Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003",

publisher = "STW",

note = "6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, SAFE ; Conference date: 25-11-2003 Through 26-11-2003",

}

Nguyen, HV, Salm, C, Krabbenborg, B, Bisschop, J, Mouthaan, AJ & Kuper, FG 2003, Electrothermomigration-induced failure in power IC metallization. in Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003. STW, Utrecht, The Netherlands, pp. 622-630, 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands, 25/11/03.

Electrothermomigration-induced failure in power IC metallization. / Nguyen, H.V.; Salm, C.; Krabbenborg, B. et al.
Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003. Utrecht, The Netherlands: STW, 2003. p. 622-630.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Electrothermomigration-induced failure in power IC metallization

AU - Nguyen, H.V.

AU - Salm, C.

AU - Krabbenborg, B.

AU - Bisschop, J.

AU - Mouthaan, A.J.

AU - Kuper, F.G.

N1 - Conference code: 6

PY - 2003/11

Y1 - 2003/11

N2 - Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.

AB - Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.

KW - Temperature gradient

KW - Electromigration

KW - Metallization

KW - Thermomigration

KW - Power IC

M3 - Conference contribution

SN - 90-73461-39-1

SP - 622

EP - 630

BT - Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003

PB - STW

CY - Utrecht, The Netherlands

T2 - 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003

Y2 - 25 November 2003 through 26 November 2003

ER -

Electrothermomigration-induced failure in power IC metallization

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Conference

Keywords

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