Abstract
Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional
driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.
| Original language | English |
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| Title of host publication | Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 622-630 |
| Number of pages | 9 |
| ISBN (Print) | 90-73461-39-1 |
| Publication status | Published - Nov 2003 |
| Event | 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003 Conference number: 6 |
Conference
| Conference | 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 |
|---|---|
| Abbreviated title | SAFE |
| Country/Territory | Netherlands |
| City | Veldhoven |
| Period | 25/11/03 → 26/11/03 |
Keywords
- Temperature gradient
- Electromigration
- Metallization
- Thermomigration
- Power IC