Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si

Ming-Jiang Zhou; M.-J. Zhou; J. Holleman; Hans Wallinga

doi:10.1049/el:19940615

Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si

Ming-Jiang Zhou
, M.-J. Zhou
, J. Holleman
, Hans Wallinga

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

228 Downloads (Pure)

Abstract

The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by either placing the electronic devices far from the photodiode, or by enclosing them with a reverse-biased guard ring diode

Original language	English
Pages (from-to)	895-897
Journal	Electronics letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1049/el:19940615
Publication status	Published - 1994

Keywords

METIS-112054
IR-15180

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10.1049/el:19940615

Elimination_or_minimisation_-_zhou

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title = "Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si",

abstract = "The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by either placing the electronic devices far from the photodiode, or by enclosing them with a reverse-biased guard ring diode",

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author = "Ming-Jiang Zhou and M.-J. Zhou and J. Holleman and Hans Wallinga",

year = "1994",

doi = "10.1049/el:19940615",

language = "English",

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pages = "895--897",

journal = "Electronics letters",

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T1 - Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si

AU - Zhou, Ming-Jiang

AU - Zhou, M.-J.

AU - Holleman, J.

AU - Wallinga, Hans

PY - 1994

Y1 - 1994

N2 - The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by either placing the electronic devices far from the photodiode, or by enclosing them with a reverse-biased guard ring diode

AB - The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by either placing the electronic devices far from the photodiode, or by enclosing them with a reverse-biased guard ring diode

KW - METIS-112054

KW - IR-15180

U2 - 10.1049/el:19940615

DO - 10.1049/el:19940615

M3 - Article

SN - 0013-5194

VL - 30

SP - 895

EP - 897

JO - Electronics letters

JF - Electronics letters

IS - 11

ER -

Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si

Abstract

Keywords

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