Energetics of Ni-induced Vacancy Line Defects on Si(001)

Henricus J.W. Zandvliet; H.K. Louwsma; P.E. Hegeman; Bene Poelsema

doi:10.1103/PhysRevLett.75.3890

Energetics of Ni-induced Vacancy Line Defects on Si(001)

Henricus J.W. Zandvliet, H.K. Louwsma, P.E. Hegeman, Bene Poelsema

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Abstract

Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.

Original language	Undefined
Pages (from-to)	3890-3893
Number of pages	4
Journal	Physical review letters
Volume	75
Issue number	75
DOIs	https://doi.org/10.1103/PhysRevLett.75.3890
Publication status	Published - 1995

Keywords

METIS-128918
IR-60454

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10.1103/PhysRevLett.75.3890

Zandvliet95energetics

Cite this

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abstract = "Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.",

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AU - Poelsema, Bene

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N2 - Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.

AB - Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.

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