Energetics of Ni-induced Vacancy Line Defects on Si(001)

Henricus J.W. Zandvliet, H.K. Louwsma, P.E. Hegeman, Bene Poelsema

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Abstract

Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.
Original languageUndefined
Pages (from-to)3890-3893
Number of pages4
JournalPhysical review letters
Volume75
Issue number75
DOIs
Publication statusPublished - 1995

Keywords

  • METIS-128918
  • IR-60454

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