Energetics of Ni-induced Vacancy Line Defects on Si(001)

Henricus J.W. Zandvliet, H.K. Louwsma, P.E. Hegeman, Bene Poelsema

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Abstract

Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.
Original languageUndefined
Pages (from-to)3890-3893
Number of pages4
JournalPhysical review letters
Volume75
Issue number75
DOIs
Publication statusPublished - 1995

Keywords

  • METIS-128918
  • IR-60454

Cite this

Zandvliet, Henricus J.W. ; Louwsma, H.K. ; Hegeman, P.E. ; Poelsema, Bene. / Energetics of Ni-induced Vacancy Line Defects on Si(001). In: Physical review letters. 1995 ; Vol. 75, No. 75. pp. 3890-3893.
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Energetics of Ni-induced Vacancy Line Defects on Si(001). / Zandvliet, Henricus J.W.; Louwsma, H.K.; Hegeman, P.E.; Poelsema, Bene.

In: Physical review letters, Vol. 75, No. 75, 1995, p. 3890-3893.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Energetics of Ni-induced Vacancy Line Defects on Si(001)

AU - Zandvliet, Henricus J.W.

AU - Louwsma, H.K.

AU - Hegeman, P.E.

AU - Poelsema, Bene

PY - 1995

Y1 - 1995

N2 - Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.

AB - Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.

KW - METIS-128918

KW - IR-60454

U2 - 10.1103/PhysRevLett.75.3890

DO - 10.1103/PhysRevLett.75.3890

M3 - Article

VL - 75

SP - 3890

EP - 3893

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 75

ER -