Energy band offset extraction - a comparative study

J.P.J. van der Steen; Raymond Josephus Engelbart Hueting; Jurriaan Schmitz

Energy band offset extraction - a comparative study

J.P.J. van der Steen, Raymond Josephus Engelbart Hueting, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

Original language	Undefined
Title of host publication	Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	592-595
Number of pages	4
ISBN (Print)	978-90-73461-56-7
Publication status	Published - 27 Nov 2008
Event	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11

Publication series

Name
Publisher	Technology Foundation STW
Number	WoTUG-31

Workshop

Workshop	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/08 → 28/11/08

Keywords

SC-DPM: Device Physics and Modeling
METIS-255005
IR-62613
EWI-14614

Access to Document

http://eprints.eemcs.utwente.nl/secure2/14614/01/steenvander.pdf

Cite this

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title = "Energy band offset extraction - a comparative study",

abstract = "Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.",

keywords = "SC-DPM: Device Physics and Modeling, METIS-255005, IR-62613, EWI-14614",

author = "{van der Steen}, J.P.J. and Hueting, {Raymond Josephus Engelbart} and Jurriaan Schmitz",

year = "2008",

month = nov,

day = "27",

language = "Undefined",

isbn = "978-90-73461-56-7",

publisher = "STW",

number = "WoTUG-31",

pages = "592--595",

booktitle = "Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)",

note = "11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 ; Conference date: 27-11-2008 Through 28-11-2008",

}

van der Steen, JPJ, Hueting, RJE & Schmitz, J 2008, Energy band offset extraction - a comparative study. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). STW, Utrecht, The Netherlands, pp. 592-595, 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, Veldhoven, Netherlands, 27/11/08. <http://eprints.eemcs.utwente.nl/secure2/14614/01/steenvander.pdf>

Energy band offset extraction - a comparative study. / van der Steen, J.P.J.; Hueting, Raymond Josephus Engelbart ; Schmitz, Jurriaan.
Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands: STW, 2008. p. 592-595.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Energy band offset extraction - a comparative study

AU - van der Steen, J.P.J.

AU - Hueting, Raymond Josephus Engelbart

AU - Schmitz, Jurriaan

N1 - Conference code: 11

PY - 2008/11/27

Y1 - 2008/11/27

N2 - Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

AB - Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

KW - SC-DPM: Device Physics and Modeling

KW - METIS-255005

KW - IR-62613

KW - EWI-14614

M3 - Conference contribution

SN - 978-90-73461-56-7

SP - 592

EP - 595

BT - Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)

PB - STW

CY - Utrecht, The Netherlands

T2 - 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008

Y2 - 27 November 2008 through 28 November 2008

ER -