Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

Pavel A. Markeev; Emad Najafidehaghani; Ziyang Gan; Kai Sotthewes; Antony George; Andrey Turchanin; Michel P. de Jong

doi:10.1021/acs.jpcc.1c01612

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

Pavel A. Markeev^*, Emad Najafidehaghani, Ziyang Gan, Kai Sotthewes, Antony George, Andrey Turchanin, Michel P. de Jong

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

25 Citations (Scopus)

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Abstract

We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS₂, MoSe₂, WS₂, and WSe₂, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO₂/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS₂, while WSe₂/metal junctions behaved according to the Schottky-Mott limit. WS₂and MoSe₂exhibited intermediate behavior.

Original language	English
Pages (from-to)	13551-13559
Number of pages	9
Journal	The Journal of physical chemistry C
Volume	125
Issue number	24
Early online date	10 Jun 2021
DOIs	https://doi.org/10.1021/acs.jpcc.1c01612
Publication status	Published - 24 Jun 2021

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UT-Hybrid-D

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@article{a2d110ded0414a9c8f7c5b5c6df617c9,

title = "Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy",

abstract = "We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2and MoSe2exhibited intermediate behavior.",

keywords = "UT-Hybrid-D",

author = "Markeev, {Pavel A.} and Emad Najafidehaghani and Ziyang Gan and Kai Sotthewes and Antony George and Andrey Turchanin and {de Jong}, {Michel P.}",

note = "Funding Information: The authors acknowledge financial support from the European Union{\textquoteright}s Horizon 2020 research and innovation program FLAG-ERA, joint with the Dutch Research Council (NWO), and Deutsche Forschungsgemeinschaft (DFG—German Research Foundation) under grant nos. 680-91-313 (NWO) and TU149/9-1 (DFG). Publisher Copyright: {\textcopyright} 2021 The Authors. Published by American Chemical Society",

year = "2021",

month = jun,

day = "24",

doi = "10.1021/acs.jpcc.1c01612",

language = "English",

volume = "125",

pages = "13551--13559",

journal = "The Journal of physical chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "24",

}

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy. / Markeev, Pavel A.; Najafidehaghani, Emad; Gan, Ziyang et al.
In: The Journal of physical chemistry C, Vol. 125, No. 24, 24.06.2021, p. 13551-13559.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

AU - Markeev, Pavel A.

AU - Najafidehaghani, Emad

AU - Gan, Ziyang

AU - Sotthewes, Kai

AU - George, Antony

AU - Turchanin, Andrey

AU - de Jong, Michel P.

N1 - Funding Information: The authors acknowledge financial support from the European Union’s Horizon 2020 research and innovation program FLAG-ERA, joint with the Dutch Research Council (NWO), and Deutsche Forschungsgemeinschaft (DFG—German Research Foundation) under grant nos. 680-91-313 (NWO) and TU149/9-1 (DFG). Publisher Copyright: © 2021 The Authors. Published by American Chemical Society

PY - 2021/6/24

Y1 - 2021/6/24

N2 - We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2and MoSe2exhibited intermediate behavior.

AB - We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2and MoSe2exhibited intermediate behavior.

KW - UT-Hybrid-D

UR - http://www.scopus.com/inward/record.url?scp=85108894181&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.1c01612

DO - 10.1021/acs.jpcc.1c01612

M3 - Article

AN - SCOPUS:85108894181

SN - 1932-7447

VL - 125

SP - 13551

EP - 13559

JO - The Journal of physical chemistry C

JF - The Journal of physical chemistry C

IS - 24

ER -

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

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Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

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Data underlying the publication: Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

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