TY - JOUR
T1 - Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy
AU - Markeev, Pavel A.
AU - Najafidehaghani, Emad
AU - Gan, Ziyang
AU - Sotthewes, Kai
AU - George, Antony
AU - Turchanin, Andrey
AU - de Jong, Michel P.
N1 - Funding Information:
The authors acknowledge financial support from the European Union’s Horizon 2020 research and innovation program FLAG-ERA, joint with the Dutch Research Council (NWO), and Deutsche Forschungsgemeinschaft (DFG—German Research Foundation) under grant nos. 680-91-313 (NWO) and TU149/9-1 (DFG).
Publisher Copyright:
© 2021 The Authors. Published by American Chemical Society
PY - 2021/6/24
Y1 - 2021/6/24
N2 - We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2and MoSe2exhibited intermediate behavior.
AB - We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2and MoSe2exhibited intermediate behavior.
KW - UT-Hybrid-D
UR - http://www.scopus.com/inward/record.url?scp=85108894181&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.1c01612
DO - 10.1021/acs.jpcc.1c01612
M3 - Article
AN - SCOPUS:85108894181
VL - 125
SP - 13551
EP - 13559
JO - Journal of physical chemistry C
JF - Journal of physical chemistry C
SN - 1932-7447
IS - 24
ER -