Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

Pavel A. Markeev*, Emad Najafidehaghani, Ziyang Gan, Kai Sotthewes, Antony George, Andrey Turchanin, Michel P. de Jong

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2and MoSe2exhibited intermediate behavior.

Original languageEnglish
Pages (from-to)13551-13559
Number of pages9
JournalJournal of physical chemistry C
Volume125
Issue number24
Early online date10 Jun 2021
DOIs
Publication statusPublished - 24 Jun 2021

Keywords

  • UT-Hybrid-D

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