Energy Storage Performance and Electric Breakdown Field of Thin Relaxor Ferroelectric PLZT Films Using Microstructure and Growth Orientation Control

Minh D. Nguyen; Evert P. Houwman; Guus Rijnders

doi:10.1021/acs.jpcc.8b04251

Energy Storage Performance and Electric Breakdown Field of Thin Relaxor Ferroelectric PLZT Films Using Microstructure and Growth Orientation Control

Minh D. Nguyen^* (Corresponding Author), Evert P. Houwman, Guus Rijnders

^*Corresponding author for this work

Inorganic Materials Science

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Thin relaxor-ferroelectric Pb_0.9La_0.1(Zr_0.52Ti_0.48)O₃ (PLZT) films were deposited on Si substrates using Ca₂Nb₃O₁₀ (CNOns) and Ti_0.87O₂ (TiOns) nanosheets as the growth template layer and SrRuO₃ (SRO) as the base electrode layer, using pulsed laser deposition. XRD and cross-sectional SEM results show that the structure of the PLZT layers changes from very dense with (001)-orientation to columnar with (110)-orientation for CNOns and TiOns, respectively. The recoverable energy-storage density (U_reco) is nearly proportional to the critical electric breakdown field (E_BD), which increases with PLZT film thickness. A very high U_reco value of 58.4 J cm^-3 and energy-storage efficiency (η) of 81.2% were obtained at an E_BD of 3400 kV cm^-1 for the 1000 nm thick PLZT film on CNOns/Si, significantly higher than for the film on TiOns/Si (U_reco = 44.0 J cm^-3 and η = 59.6% for E_BD = 2800 kV cm^-1). This excellent energy storage performance in the PLZT/SRO/CNOns/Si is due to the dense film structure and nearly hysteresis-free relaxor behavior. These results are important for improving the performance of relaxor-ferroelectric thin films for high-power capacitor applications.

Original language	English
Pages (from-to)	15171-15179
Number of pages	9
Journal	The Journal of physical chemistry part C
Volume	122
Issue number	27
DOIs	https://doi.org/10.1021/acs.jpcc.8b04251
Publication status	Published - 12 Jul 2018

Keywords

UT-Hybrid-D
22/4 OA procedure

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10.1021/acs.jpcc.8b04251

Nguyen2018energyFinal published version, 4.26 MBLicence: Taverne

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title = "Energy Storage Performance and Electric Breakdown Field of Thin Relaxor Ferroelectric PLZT Films Using Microstructure and Growth Orientation Control",

abstract = "Thin relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films were deposited on Si substrates using Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) nanosheets as the growth template layer and SrRuO3 (SRO) as the base electrode layer, using pulsed laser deposition. XRD and cross-sectional SEM results show that the structure of the PLZT layers changes from very dense with (001)-orientation to columnar with (110)-orientation for CNOns and TiOns, respectively. The recoverable energy-storage density (Ureco) is nearly proportional to the critical electric breakdown field (EBD), which increases with PLZT film thickness. A very high Ureco value of 58.4 J cm-3 and energy-storage efficiency (η) of 81.2% were obtained at an EBD of 3400 kV cm-1 for the 1000 nm thick PLZT film on CNOns/Si, significantly higher than for the film on TiOns/Si (Ureco = 44.0 J cm-3 and η = 59.6% for EBD = 2800 kV cm-1). This excellent energy storage performance in the PLZT/SRO/CNOns/Si is due to the dense film structure and nearly hysteresis-free relaxor behavior. These results are important for improving the performance of relaxor-ferroelectric thin films for high-power capacitor applications.",

keywords = "UT-Hybrid-D, 22/4 OA procedure",

author = "Nguyen, {Minh D.} and Houwman, {Evert P.} and Guus Rijnders",

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doi = "10.1021/acs.jpcc.8b04251",

language = "English",

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Energy Storage Performance and Electric Breakdown Field of Thin Relaxor Ferroelectric PLZT Films Using Microstructure and Growth Orientation Control. / Nguyen, Minh D. (Corresponding Author); Houwman, Evert P.; Rijnders, Guus.

In: The Journal of physical chemistry part C, Vol. 122, No. 27, 12.07.2018, p. 15171-15179.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Energy Storage Performance and Electric Breakdown Field of Thin Relaxor Ferroelectric PLZT Films Using Microstructure and Growth Orientation Control

AU - Nguyen, Minh D.

AU - Houwman, Evert P.

AU - Rijnders, Guus

N1 - ACS deal

PY - 2018/7/12

Y1 - 2018/7/12

N2 - Thin relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films were deposited on Si substrates using Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) nanosheets as the growth template layer and SrRuO3 (SRO) as the base electrode layer, using pulsed laser deposition. XRD and cross-sectional SEM results show that the structure of the PLZT layers changes from very dense with (001)-orientation to columnar with (110)-orientation for CNOns and TiOns, respectively. The recoverable energy-storage density (Ureco) is nearly proportional to the critical electric breakdown field (EBD), which increases with PLZT film thickness. A very high Ureco value of 58.4 J cm-3 and energy-storage efficiency (η) of 81.2% were obtained at an EBD of 3400 kV cm-1 for the 1000 nm thick PLZT film on CNOns/Si, significantly higher than for the film on TiOns/Si (Ureco = 44.0 J cm-3 and η = 59.6% for EBD = 2800 kV cm-1). This excellent energy storage performance in the PLZT/SRO/CNOns/Si is due to the dense film structure and nearly hysteresis-free relaxor behavior. These results are important for improving the performance of relaxor-ferroelectric thin films for high-power capacitor applications.

AB - Thin relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films were deposited on Si substrates using Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) nanosheets as the growth template layer and SrRuO3 (SRO) as the base electrode layer, using pulsed laser deposition. XRD and cross-sectional SEM results show that the structure of the PLZT layers changes from very dense with (001)-orientation to columnar with (110)-orientation for CNOns and TiOns, respectively. The recoverable energy-storage density (Ureco) is nearly proportional to the critical electric breakdown field (EBD), which increases with PLZT film thickness. A very high Ureco value of 58.4 J cm-3 and energy-storage efficiency (η) of 81.2% were obtained at an EBD of 3400 kV cm-1 for the 1000 nm thick PLZT film on CNOns/Si, significantly higher than for the film on TiOns/Si (Ureco = 44.0 J cm-3 and η = 59.6% for EBD = 2800 kV cm-1). This excellent energy storage performance in the PLZT/SRO/CNOns/Si is due to the dense film structure and nearly hysteresis-free relaxor behavior. These results are important for improving the performance of relaxor-ferroelectric thin films for high-power capacitor applications.

KW - UT-Hybrid-D

KW - 22/4 OA procedure

UR - http://www.scopus.com/inward/record.url?scp=85048876285&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.8b04251

DO - 10.1021/acs.jpcc.8b04251

M3 - Article

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VL - 122

SP - 15171

EP - 15179

JO - The Journal of physical chemistry part C

JF - The Journal of physical chemistry part C

SN - 1932-7447

IS - 27

ER -

Energy Storage Performance and Electric Breakdown Field of Thin Relaxor Ferroelectric PLZT Films Using Microstructure and Growth Orientation Control

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