Energy storage performance of silicon-integrated Sr0.98Mn0.02TiO3 thin film capacitors

M.D. Nguyen*, D.D. Vo, T.V. Vu, E.P. Houwman

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Epitaxial Sr0.98Mn0.02TiO3 (SMTO) thin films were grown on conductive-oxide electrodes (LaNiO3 – LNO, SrRuO3 – SRO, and La0.67Sr0.33MnO3 – LSMO) buffered SrTiO3/Si substrates, using a pulsed laser deposition method. The effect of the bottom electrodes on the breakdown and energy storage density of SMTO thin films have been systematically investigated. A high recoverable energy storage density (Ur) of 113.3 J/cm3 was achieved at 7.30 MV/cm in an SMTO/LSMO film, which is significantly higher than that of SMTO/SRO (100.4 J/cm3 at 7.15 MV/cm), and SMTO/LNO (67.2 J/cm3 at 6.30 MV/cm) films. This high Ur value is simultaneously attributed to an improvement in both polarization and breakdown strength induced by a high Schottky barrier height at the SMTO/LSMO junction. In addition, the SMTO/LSMO film demonstrated excellent thermal stability (up to 200 °C), and good fatigue endurance (up to 1010 cycles), indicating its suitability for long-term operation and use in harsh environmental conditions of high energy storage capacitor applications.

Original languageEnglish
Article number130290
JournalMaterials chemistry and physics
Volume332
DOIs
Publication statusPublished - 15 Feb 2025

Keywords

  • UT-Hybrid-D
  • Epitaxy
  • Lead-free film
  • Schottky barrier height
  • Energy storage

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