Energy-transfer upconversion in Al2O3:Er3+ thin layers

Kerstin Worhoff, J. Bradley, L. Agazzi, D. Geskus, F. Ay, A. Kahn, H. Scheife, K. Petermann, G. Huber, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    19 Downloads (Pure)

    Abstract

    Erbium-doped aluminum oxide (Al2O3:Er) is a promising material for integrated amplifier or tunable laser applications due to its wide gain spectrum around 1550 nm. We deposited Al2O3 layers on thermally oxidized Si-wafers by reactive co-sputtering at 550°C. Propagation losses were 0.11 dB/cm at λ =1.5 μm. Channel waveguides were fabricated by reactive ion etching with propagation losses down to 0.21 dB/cm. Under pumping at 977 nm, the optical small-signal gain at 1533 nm is 0.84 dB/cm, resulting in 5.4 dB net gain over the waveguide length of 6.4 cm. Net gain is obtained over a wavelength range of 41 nm. The Er concentration was measured using Rutherford Back-Scattering (RBS). Lifetimes of the 4I13/2 level of up to 7 ms were measured for Er concentrations around 2×1020 cm-3. A faster decay with an increasingly non-exponential initial component is measured for higher Er concentrations (Fig. 2). While the initial quenching is probably due to migration-accelerated energy-transfer upconversion between neighboring Er3+ ions in the 4I13/2 level, the decreasing exponential tail is due to either pair-induced energy-transfer upconversion or quenching by impurity ions. Detailed investigations of the quenching mechanisms are currently under way.
    Original languageUndefined
    Title of host publicationSecond International Workshop on Advanced Spectroscopy and Optical Materials
    Place of PublicationGdansk, Poland
    PublisherInstitute of Experimental Physics, Gdansk University
    PagesPaper 6-O
    Number of pages1
    ISBN (Print)not assigned
    Publication statusPublished - Jul 2008

    Publication series

    Name
    PublisherInstitute of Experimental Physics, Gdansk University
    Number1

    Keywords

    • IOMS-APD: Active Photonic Devices
    • METIS-255118
    • IR-65296
    • EWI-14872

    Cite this

    Worhoff, K., Bradley, J., Agazzi, L., Geskus, D., Ay, F., Kahn, A., ... Pollnau, M. (2008). Energy-transfer upconversion in Al2O3:Er3+ thin layers. In Second International Workshop on Advanced Spectroscopy and Optical Materials (pp. Paper 6-O). Gdansk, Poland: Institute of Experimental Physics, Gdansk University.
    Worhoff, Kerstin ; Bradley, J. ; Agazzi, L. ; Geskus, D. ; Ay, F. ; Kahn, A. ; Scheife, H. ; Petermann, K. ; Huber, G. ; Pollnau, Markus. / Energy-transfer upconversion in Al2O3:Er3+ thin layers. Second International Workshop on Advanced Spectroscopy and Optical Materials. Gdansk, Poland : Institute of Experimental Physics, Gdansk University, 2008. pp. Paper 6-O
    @inproceedings{2629debd23204dc5b6b22f8bbc136c19,
    title = "Energy-transfer upconversion in Al2O3:Er3+ thin layers",
    abstract = "Erbium-doped aluminum oxide (Al2O3:Er) is a promising material for integrated amplifier or tunable laser applications due to its wide gain spectrum around 1550 nm. We deposited Al2O3 layers on thermally oxidized Si-wafers by reactive co-sputtering at 550°C. Propagation losses were 0.11 dB/cm at λ =1.5 μm. Channel waveguides were fabricated by reactive ion etching with propagation losses down to 0.21 dB/cm. Under pumping at 977 nm, the optical small-signal gain at 1533 nm is 0.84 dB/cm, resulting in 5.4 dB net gain over the waveguide length of 6.4 cm. Net gain is obtained over a wavelength range of 41 nm. The Er concentration was measured using Rutherford Back-Scattering (RBS). Lifetimes of the 4I13/2 level of up to 7 ms were measured for Er concentrations around 2×1020 cm-3. A faster decay with an increasingly non-exponential initial component is measured for higher Er concentrations (Fig. 2). While the initial quenching is probably due to migration-accelerated energy-transfer upconversion between neighboring Er3+ ions in the 4I13/2 level, the decreasing exponential tail is due to either pair-induced energy-transfer upconversion or quenching by impurity ions. Detailed investigations of the quenching mechanisms are currently under way.",
    keywords = "IOMS-APD: Active Photonic Devices, METIS-255118, IR-65296, EWI-14872",
    author = "Kerstin Worhoff and J. Bradley and L. Agazzi and D. Geskus and F. Ay and A. Kahn and H. Scheife and K. Petermann and G. Huber and Markus Pollnau",
    note = "Paper 6-O",
    year = "2008",
    month = "7",
    language = "Undefined",
    isbn = "not assigned",
    publisher = "Institute of Experimental Physics, Gdansk University",
    number = "1",
    pages = "Paper 6--O",
    booktitle = "Second International Workshop on Advanced Spectroscopy and Optical Materials",

    }

    Worhoff, K, Bradley, J, Agazzi, L, Geskus, D, Ay, F, Kahn, A, Scheife, H, Petermann, K, Huber, G & Pollnau, M 2008, Energy-transfer upconversion in Al2O3:Er3+ thin layers. in Second International Workshop on Advanced Spectroscopy and Optical Materials. Institute of Experimental Physics, Gdansk University, Gdansk, Poland, pp. Paper 6-O.

    Energy-transfer upconversion in Al2O3:Er3+ thin layers. / Worhoff, Kerstin; Bradley, J.; Agazzi, L.; Geskus, D.; Ay, F.; Kahn, A.; Scheife, H.; Petermann, K.; Huber, G.; Pollnau, Markus.

    Second International Workshop on Advanced Spectroscopy and Optical Materials. Gdansk, Poland : Institute of Experimental Physics, Gdansk University, 2008. p. Paper 6-O.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Energy-transfer upconversion in Al2O3:Er3+ thin layers

    AU - Worhoff, Kerstin

    AU - Bradley, J.

    AU - Agazzi, L.

    AU - Geskus, D.

    AU - Ay, F.

    AU - Kahn, A.

    AU - Scheife, H.

    AU - Petermann, K.

    AU - Huber, G.

    AU - Pollnau, Markus

    N1 - Paper 6-O

    PY - 2008/7

    Y1 - 2008/7

    N2 - Erbium-doped aluminum oxide (Al2O3:Er) is a promising material for integrated amplifier or tunable laser applications due to its wide gain spectrum around 1550 nm. We deposited Al2O3 layers on thermally oxidized Si-wafers by reactive co-sputtering at 550°C. Propagation losses were 0.11 dB/cm at λ =1.5 μm. Channel waveguides were fabricated by reactive ion etching with propagation losses down to 0.21 dB/cm. Under pumping at 977 nm, the optical small-signal gain at 1533 nm is 0.84 dB/cm, resulting in 5.4 dB net gain over the waveguide length of 6.4 cm. Net gain is obtained over a wavelength range of 41 nm. The Er concentration was measured using Rutherford Back-Scattering (RBS). Lifetimes of the 4I13/2 level of up to 7 ms were measured for Er concentrations around 2×1020 cm-3. A faster decay with an increasingly non-exponential initial component is measured for higher Er concentrations (Fig. 2). While the initial quenching is probably due to migration-accelerated energy-transfer upconversion between neighboring Er3+ ions in the 4I13/2 level, the decreasing exponential tail is due to either pair-induced energy-transfer upconversion or quenching by impurity ions. Detailed investigations of the quenching mechanisms are currently under way.

    AB - Erbium-doped aluminum oxide (Al2O3:Er) is a promising material for integrated amplifier or tunable laser applications due to its wide gain spectrum around 1550 nm. We deposited Al2O3 layers on thermally oxidized Si-wafers by reactive co-sputtering at 550°C. Propagation losses were 0.11 dB/cm at λ =1.5 μm. Channel waveguides were fabricated by reactive ion etching with propagation losses down to 0.21 dB/cm. Under pumping at 977 nm, the optical small-signal gain at 1533 nm is 0.84 dB/cm, resulting in 5.4 dB net gain over the waveguide length of 6.4 cm. Net gain is obtained over a wavelength range of 41 nm. The Er concentration was measured using Rutherford Back-Scattering (RBS). Lifetimes of the 4I13/2 level of up to 7 ms were measured for Er concentrations around 2×1020 cm-3. A faster decay with an increasingly non-exponential initial component is measured for higher Er concentrations (Fig. 2). While the initial quenching is probably due to migration-accelerated energy-transfer upconversion between neighboring Er3+ ions in the 4I13/2 level, the decreasing exponential tail is due to either pair-induced energy-transfer upconversion or quenching by impurity ions. Detailed investigations of the quenching mechanisms are currently under way.

    KW - IOMS-APD: Active Photonic Devices

    KW - METIS-255118

    KW - IR-65296

    KW - EWI-14872

    M3 - Conference contribution

    SN - not assigned

    SP - Paper 6-O

    BT - Second International Workshop on Advanced Spectroscopy and Optical Materials

    PB - Institute of Experimental Physics, Gdansk University

    CY - Gdansk, Poland

    ER -

    Worhoff K, Bradley J, Agazzi L, Geskus D, Ay F, Kahn A et al. Energy-transfer upconversion in Al2O3:Er3+ thin layers. In Second International Workshop on Advanced Spectroscopy and Optical Materials. Gdansk, Poland: Institute of Experimental Physics, Gdansk University. 2008. p. Paper 6-O