Engineering of dislocation-loops for light emission from silicon diodes

T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holleman, P. Le Minh, Jurriaan Schmitz

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Abstract

Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
Original languageUndefined
Pages (from-to)303-308
Number of pages6
JournalSolid state phenomena
Volume131-133
Publication statusPublished - 2008

Keywords

  • EWI-11878
  • METIS-255412
  • SC-SBLE: Silicon-based Light Emitters
  • IR-62157

Cite this

Mchedlidze, T., Arguirov, T., Kittler, M., Hoang, T., Holleman, J., Le Minh, P., & Schmitz, J. (2008). Engineering of dislocation-loops for light emission from silicon diodes. Solid state phenomena, 131-133, 303-308.
Mchedlidze, T. ; Arguirov, T. ; Kittler, M. ; Hoang, T. ; Holleman, J. ; Le Minh, P. ; Schmitz, Jurriaan. / Engineering of dislocation-loops for light emission from silicon diodes. In: Solid state phenomena. 2008 ; Vol. 131-133. pp. 303-308.
@article{9b6c9a663efc460cadbceb49e0043226,
title = "Engineering of dislocation-loops for light emission from silicon diodes",
abstract = "Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.",
keywords = "EWI-11878, METIS-255412, SC-SBLE: Silicon-based Light Emitters, IR-62157",
author = "T. Mchedlidze and T. Arguirov and M. Kittler and T. Hoang and J. Holleman and {Le Minh}, P. and Jurriaan Schmitz",
note = "ID: 194.95.141.200-17/09/07",
year = "2008",
language = "Undefined",
volume = "131-133",
pages = "303--308",
journal = "Solid state phenomena",
issn = "1012-0394",
publisher = "Scientific.net",

}

Mchedlidze, T, Arguirov, T, Kittler, M, Hoang, T, Holleman, J, Le Minh, P & Schmitz, J 2008, 'Engineering of dislocation-loops for light emission from silicon diodes' Solid state phenomena, vol. 131-133, pp. 303-308.

Engineering of dislocation-loops for light emission from silicon diodes. / Mchedlidze, T.; Arguirov, T.; Kittler, M.; Hoang, T.; Holleman, J.; Le Minh, P.; Schmitz, Jurriaan.

In: Solid state phenomena, Vol. 131-133, 2008, p. 303-308.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Engineering of dislocation-loops for light emission from silicon diodes

AU - Mchedlidze, T.

AU - Arguirov, T.

AU - Kittler, M.

AU - Hoang, T.

AU - Holleman, J.

AU - Le Minh, P.

AU - Schmitz, Jurriaan

N1 - ID: 194.95.141.200-17/09/07

PY - 2008

Y1 - 2008

N2 - Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.

AB - Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.

KW - EWI-11878

KW - METIS-255412

KW - SC-SBLE: Silicon-based Light Emitters

KW - IR-62157

M3 - Article

VL - 131-133

SP - 303

EP - 308

JO - Solid state phenomena

JF - Solid state phenomena

SN - 1012-0394

ER -

Mchedlidze T, Arguirov T, Kittler M, Hoang T, Holleman J, Le Minh P et al. Engineering of dislocation-loops for light emission from silicon diodes. Solid state phenomena. 2008;131-133:303-308.