Engineering of dislocation-loops for light emission from silicon diodes

T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holleman, P. Le Minh, Jurriaan Schmitz

    Research output: Contribution to journalArticleAcademicpeer-review

    6 Citations (Scopus)

    Abstract

    Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
    Original languageUndefined
    Pages (from-to)303-308
    Number of pages6
    JournalSolid state phenomena
    Volume131-133
    Publication statusPublished - 2008

    Keywords

    • EWI-11878
    • METIS-255412
    • SC-SBLE: Silicon-based Light Emitters
    • IR-62157

    Cite this

    Mchedlidze, T., Arguirov, T., Kittler, M., Hoang, T., Holleman, J., Le Minh, P., & Schmitz, J. (2008). Engineering of dislocation-loops for light emission from silicon diodes. Solid state phenomena, 131-133, 303-308.
    Mchedlidze, T. ; Arguirov, T. ; Kittler, M. ; Hoang, T. ; Holleman, J. ; Le Minh, P. ; Schmitz, Jurriaan. / Engineering of dislocation-loops for light emission from silicon diodes. In: Solid state phenomena. 2008 ; Vol. 131-133. pp. 303-308.
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    title = "Engineering of dislocation-loops for light emission from silicon diodes",
    abstract = "Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.",
    keywords = "EWI-11878, METIS-255412, SC-SBLE: Silicon-based Light Emitters, IR-62157",
    author = "T. Mchedlidze and T. Arguirov and M. Kittler and T. Hoang and J. Holleman and {Le Minh}, P. and Jurriaan Schmitz",
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    year = "2008",
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    volume = "131-133",
    pages = "303--308",
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    Mchedlidze, T, Arguirov, T, Kittler, M, Hoang, T, Holleman, J, Le Minh, P & Schmitz, J 2008, 'Engineering of dislocation-loops for light emission from silicon diodes', Solid state phenomena, vol. 131-133, pp. 303-308.

    Engineering of dislocation-loops for light emission from silicon diodes. / Mchedlidze, T.; Arguirov, T.; Kittler, M.; Hoang, T.; Holleman, J.; Le Minh, P.; Schmitz, Jurriaan.

    In: Solid state phenomena, Vol. 131-133, 2008, p. 303-308.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Engineering of dislocation-loops for light emission from silicon diodes

    AU - Mchedlidze, T.

    AU - Arguirov, T.

    AU - Kittler, M.

    AU - Hoang, T.

    AU - Holleman, J.

    AU - Le Minh, P.

    AU - Schmitz, Jurriaan

    N1 - ID: 194.95.141.200-17/09/07

    PY - 2008

    Y1 - 2008

    N2 - Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.

    AB - Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.

    KW - EWI-11878

    KW - METIS-255412

    KW - SC-SBLE: Silicon-based Light Emitters

    KW - IR-62157

    M3 - Article

    VL - 131-133

    SP - 303

    EP - 308

    JO - Solid state phenomena

    JF - Solid state phenomena

    SN - 1012-0394

    ER -

    Mchedlidze T, Arguirov T, Kittler M, Hoang T, Holleman J, Le Minh P et al. Engineering of dislocation-loops for light emission from silicon diodes. Solid state phenomena. 2008;131-133:303-308.