Engineering of dislocation-loops for light emission from silicon diodes

T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holleman, P. Le Minh, Jurriaan Schmitz

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    6 Citations (Scopus)


    Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
    Original languageUndefined
    Pages (from-to)303-308
    Number of pages6
    JournalSolid state phenomena
    Publication statusPublished - 2008


    • EWI-11878
    • METIS-255412
    • SC-SBLE: Silicon-based Light Emitters
    • IR-62157

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