Abstract
| Original language | Undefined |
|---|---|
| Pages (from-to) | 303-308 |
| Number of pages | 6 |
| Journal | Solid state phenomena |
| Volume | 131-133 |
| Publication status | Published - 2008 |
Keywords
- EWI-11878
- METIS-255412
- SC-SBLE: Silicon-based Light Emitters
- IR-62157
Cite this
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Engineering of dislocation-loops for light emission from silicon diodes. / Mchedlidze, T.; Arguirov, T.; Kittler, M.; Hoang, T.; Holleman, J.; Le Minh, P.; Schmitz, Jurriaan.
In: Solid state phenomena, Vol. 131-133, 2008, p. 303-308.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Engineering of dislocation-loops for light emission from silicon diodes
AU - Mchedlidze, T.
AU - Arguirov, T.
AU - Kittler, M.
AU - Hoang, T.
AU - Holleman, J.
AU - Le Minh, P.
AU - Schmitz, Jurriaan
N1 - ID: 194.95.141.200-17/09/07
PY - 2008
Y1 - 2008
N2 - Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
AB - Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
KW - EWI-11878
KW - METIS-255412
KW - SC-SBLE: Silicon-based Light Emitters
KW - IR-62157
M3 - Article
VL - 131-133
SP - 303
EP - 308
JO - Solid state phenomena
JF - Solid state phenomena
SN - 1012-0394
ER -