Enhanced gain in Er-doped Al2O3 channel waveguide amplifiers

J. Bradley, D. Geskus, F. Ay, Markus Pollnau, W.M. Arnoldbik

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    Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on thermally oxidized silicon substrates. Significant net internal gain of up to 1.6 dB/cm has been measured at 1533 nm for the optimum Er concentration. Furthermore, net gain has been demonstrated over a wavelength range of 40 nm, including the telecom C-band, demonstrating the potential for amplifiers or tunable lasers on a silicon platform at these critical wavelengths.
    Original languageUndefined
    Title of host publicationProceedings of the 13th Annual Symposium of the IEEE LEOS Benelux Chapter
    EditorsKerstin Worhoff, L. Agazzi, N. Ismail, X Leijtens
    Place of PublicationEnschede, The Netherlands
    PublisherIEEE/LEOS Benelux Chapter
    Number of pages4
    ISBN (Print)978-90-365-2768-2
    Publication statusPublished - 27 Nov 2008
    Event13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008 - Enschede, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 13

    Publication series

    PublisherIEEE LEOS Benelux Chapter


    Conference13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008


    • IOMS-APD: Active Photonic Devices
    • EC Grant Agreement nr.: FP6/017501
    • METIS-255099
    • IR-65278
    • EWI-14831

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