Enhanced gain in Er-doped Al2O3 channel waveguide amplifiers

J. Bradley; D. Geskus; F. Ay; Markus Pollnau; W.M. Arnoldbik

Enhanced gain in Er-doped Al₂O₃ channel waveguide amplifiers

J. Bradley
, D. Geskus
, F. Ay
, Markus Pollnau
, W.M. Arnoldbik

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

106 Downloads (Pure)

Abstract

Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on thermally oxidized silicon substrates. Significant net internal gain of up to 1.6 dB/cm has been measured at 1533 nm for the optimum Er concentration. Furthermore, net gain has been demonstrated over a wavelength range of 40 nm, including the telecom C-band, demonstrating the potential for amplifiers or tunable lasers on a silicon platform at these critical wavelengths.

Original language	Undefined
Title of host publication	Proceedings of the 13th Annual Symposium of the IEEE LEOS Benelux Chapter
Editors	Kerstin Worhoff, L. Agazzi, N. Ismail, X Leijtens
Place of Publication	Enschede, The Netherlands
Publisher	IEEE
Pages	131-134
Number of pages	4
ISBN (Print)	978-90-365-2768-2
Publication status	Published - 27 Nov 2008
Event	13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008 - Enschede, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 13

Publication series

Name
Publisher	IEEE LEOS Benelux Chapter
Number	2008/16200

Conference

Conference	13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008
Country/Territory	Netherlands
City	Enschede
Period	27/11/08 → 28/11/08

Keywords

IOMS-APD: Active Photonic Devices
EC Grant Agreement nr.: FP6/017501
METIS-255099
IR-65278
EWI-14831

Access to Document

Bradley_J._IEEE_LEOS_Benelux_Ch._27,28_Nov_08_Poster_Pp_131-134Final published version, 183 KB

Cite this

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title = "Enhanced gain in Er-doped Al2O3 channel waveguide amplifiers",

abstract = "Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on thermally oxidized silicon substrates. Significant net internal gain of up to 1.6 dB/cm has been measured at 1533 nm for the optimum Er concentration. Furthermore, net gain has been demonstrated over a wavelength range of 40 nm, including the telecom C-band, demonstrating the potential for amplifiers or tunable lasers on a silicon platform at these critical wavelengths.",

keywords = "IOMS-APD: Active Photonic Devices, EC Grant Agreement nr.: FP6/017501, METIS-255099, IR-65278, EWI-14831",

author = "J. Bradley and D. Geskus and F. Ay and Markus Pollnau and W.M. Arnoldbik",

note = "10.3990/1.978-90-365-2768-2 ; 13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008 ; Conference date: 27-11-2008 Through 28-11-2008",

year = "2008",

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day = "27",

language = "Undefined",

isbn = "978-90-365-2768-2",

publisher = "IEEE",

number = "2008/16200",

pages = "131--134",

editor = "Kerstin Worhoff and L. Agazzi and N. Ismail and X Leijtens",

booktitle = "Proceedings of the 13th Annual Symposium of the IEEE LEOS Benelux Chapter",

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}

Bradley, J, Geskus, D, Ay, F, Pollnau, M & Arnoldbik, WM 2008, Enhanced gain in Er-doped Al₂O₃ channel waveguide amplifiers. in K Worhoff, L Agazzi, N Ismail & X Leijtens (eds), Proceedings of the 13th Annual Symposium of the IEEE LEOS Benelux Chapter. IEEE, Enschede, The Netherlands, pp. 131-134, 13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008, Enschede, Netherlands, 27/11/08.

Enhanced gain in Er-doped Al₂O₃ channel waveguide amplifiers. / Bradley, J.; Geskus, D.; Ay, F. et al.
Proceedings of the 13th Annual Symposium of the IEEE LEOS Benelux Chapter. ed. / Kerstin Worhoff; L. Agazzi; N. Ismail; X Leijtens. Enschede, The Netherlands: IEEE, 2008. p. 131-134.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Enhanced gain in Er-doped Al2O3 channel waveguide amplifiers

AU - Bradley, J.

AU - Geskus, D.

AU - Ay, F.

AU - Pollnau, Markus

AU - Arnoldbik, W.M.

N1 - Conference code: 13

PY - 2008/11/27

Y1 - 2008/11/27

N2 - Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on thermally oxidized silicon substrates. Significant net internal gain of up to 1.6 dB/cm has been measured at 1533 nm for the optimum Er concentration. Furthermore, net gain has been demonstrated over a wavelength range of 40 nm, including the telecom C-band, demonstrating the potential for amplifiers or tunable lasers on a silicon platform at these critical wavelengths.

AB - Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on thermally oxidized silicon substrates. Significant net internal gain of up to 1.6 dB/cm has been measured at 1533 nm for the optimum Er concentration. Furthermore, net gain has been demonstrated over a wavelength range of 40 nm, including the telecom C-band, demonstrating the potential for amplifiers or tunable lasers on a silicon platform at these critical wavelengths.

KW - IOMS-APD: Active Photonic Devices

KW - EC Grant Agreement nr.: FP6/017501

KW - METIS-255099

KW - IR-65278

KW - EWI-14831

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BT - Proceedings of the 13th Annual Symposium of the IEEE LEOS Benelux Chapter

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T2 - 13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008

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