Abstract
Reported is a summary of the development of EUV Mo/Si multilayer coating technology. Though the results are developed for application in Extreme Ultraviolet Lithography, they are of a broader relevance including optics for astronomy. The coating process used consists of electron beam evaporation in combination with low energy ion beam smoothening. The radiation hardness of these coatings is discussed and methods to reduce the multilayer induced substrate stress. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65%, while the non correctable figure error added by the full multilayer stack is controlled to better than 15 picometer.
Original language | English |
---|---|
Article number | 590002 |
Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Proceedings of SPIE - the international society for optical engineering |
Volume | 5900 |
DOIs | |
Publication status | Published - 1 Dec 2005 |
Externally published | Yes |
Event | Optics for EUV, X-Ray, and Gamma-Ray Astronomy II 2005 - San Diego, United States Duration: 3 Aug 2005 → 4 Aug 2005 Conference number: 2 |
Keywords
- EUV Astronomy
- EUV Lithography
- Mo/Si multilayers