Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

X. Wan; E.P. Houwman; R. Steenwelle; R. van Schaijk; M.D. Nguyen; M. Dekkers; G. Rijnders

doi:10.1063/1.4867477

Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

X. Wan, E.P. Houwman, R. Steenwelle, R. van Schaijk, M.D. Nguyen, M. Dekkers, G. Rijnders

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Abstract

Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti content is explained by an abrupt transition from the rhombohedral r-phase to the tetragonal (c/a) 45 phase for x ≈ 0.6, indicating a shift of the Morphotropic Phase Boundary to this value, where the effective piezoelectric coefficient e3 1 ,eff and dielectric constant ε33 ,eff reach their maximum values. These findings are of great significance for Si-based piezo-micro electro mechanical systems, in particular energy harvesters. The largest value of the figure-of-merit for such devices was found for x = 0.6, FOM=24.0 GPa

Original language	English
Article number	092902
Number of pages	5
Journal	Applied physics letters
Volume	104
DOIs	https://doi.org/10.1063/1.4867477
Publication status	Published - 2014

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title = "Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary",

abstract = "Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti content is explained by an abrupt transition from the rhombohedral r-phase to the tetragonal (c/a) 45 phase for x ≈ 0.6, indicating a shift of the Morphotropic Phase Boundary to this value, where the effective piezoelectric coefficient e3 1 ,eff and dielectric constant ε33 ,eff reach their maximum values. These findings are of great significance for Si-based piezo-micro electro mechanical systems, in particular energy harvesters. The largest value of the figure-of-merit for such devices was found for x = 0.6, FOM=24.0 GPa",

author = "X. Wan and E.P. Houwman and R. Steenwelle and {van Schaijk}, R. and M.D. Nguyen and M. Dekkers and G. Rijnders",

year = "2014",

doi = "10.1063/1.4867477",

language = "English",

volume = "104",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

AU - Wan, X.

AU - Houwman, E.P.

AU - Steenwelle, R.

AU - van Schaijk, R.

AU - Nguyen, M.D.

AU - Dekkers, M.

AU - Rijnders, G.

PY - 2014

Y1 - 2014

N2 - Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti content is explained by an abrupt transition from the rhombohedral r-phase to the tetragonal (c/a) 45 phase for x ≈ 0.6, indicating a shift of the Morphotropic Phase Boundary to this value, where the effective piezoelectric coefficient e3 1 ,eff and dielectric constant ε33 ,eff reach their maximum values. These findings are of great significance for Si-based piezo-micro electro mechanical systems, in particular energy harvesters. The largest value of the figure-of-merit for such devices was found for x = 0.6, FOM=24.0 GPa

AB - Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti content is explained by an abrupt transition from the rhombohedral r-phase to the tetragonal (c/a) 45 phase for x ≈ 0.6, indicating a shift of the Morphotropic Phase Boundary to this value, where the effective piezoelectric coefficient e3 1 ,eff and dielectric constant ε33 ,eff reach their maximum values. These findings are of great significance for Si-based piezo-micro electro mechanical systems, in particular energy harvesters. The largest value of the figure-of-merit for such devices was found for x = 0.6, FOM=24.0 GPa

U2 - 10.1063/1.4867477

DO - 10.1063/1.4867477

M3 - Article

VL - 104

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

M1 - 092902

ER -

Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

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