Enhanced reflectance of interface engineered Mo/Si multilayers produced by thermal particle deposition

A. E. Yakshin*, R. W E Van De Kruijs, I. Nedelcu, E. Zoethout, E. Louis, F. Bijkerk, H. Enkisch, S. Müllender

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

36 Citations (Scopus)

Abstract

A new deposition technique that builds on the thermal particle characteristics typical for e-beam deposition is described. This technique applies magnetron sputtering in a special scheme where these characteristics of the e-beam deposition method are achieved. The method was used for interface engineering of Mo/Si multilayers, with different barrier layer materials being tested. Composition of the barrier layers formed was studied using XPS. Results are shown on the general example of a Mo/B4C/Si/B4C system. The ultra-thin reflectance enhancement B4C barriers can be deposited with low added stress, resulting in a multilayer stress as low as about -150 MPa. The best interface engineered multilayers reflect 70.5% at 13.3 nm and 70.15% at 13.5 nm. These results were achieved with 50 period multilayers terminated with a standard Si layer.

Original languageEnglish
Article number65170I
JournalProceedings of SPIE - the international society for optical engineering
Volume6517
Issue numberPART 1
DOIs
Publication statusPublished - 15 Oct 2007
Externally publishedYes
EventEmerging Lithographic Technologies XI 2007 - San Jose, United States
Duration: 27 Feb 20071 Mar 2007

Keywords

  • BC
  • Barrier
  • Deposition
  • Diffusion
  • EUV
  • Interface
  • Mo
  • Multilayer
  • Reflectance
  • Si
  • Stress

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