Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback

Yuan-Ching Lien, Eric A.M. Klumperink, Bernard Tenbroek, Jon Strange, Bram Nauta

    Research output: Contribution to journalArticleAcademicpeer-review

    10 Citations (Scopus)
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    Abstract

    Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.
    Original languageEnglish
    Pages (from-to)1348-1360
    Number of pages13
    JournalIEEE journal of solid-state circuits
    Volume53
    Issue number5
    Early online date5 Feb 2018
    DOIs
    Publication statusPublished - 1 May 2018

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    Poles
    Feedback
    Noise figure
    Bandpass filters
    Mobile phones
    Frequency bands
    Networks (circuits)

    Cite this

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    title = "Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback",
    abstract = "Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.",
    author = "Yuan-Ching Lien and Klumperink, {Eric A.M.} and Bernard Tenbroek and Jon Strange and Bram Nauta",
    year = "2018",
    month = "5",
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    doi = "10.1109/JSSC.2018.2791490",
    language = "English",
    volume = "53",
    pages = "1348--1360",
    journal = "IEEE journal of solid-state circuits",
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    publisher = "IEEE",
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    Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback. / Lien, Yuan-Ching ; Klumperink, Eric A.M.; Tenbroek, Bernard; Strange, Jon; Nauta, Bram .

    In: IEEE journal of solid-state circuits, Vol. 53, No. 5, 01.05.2018, p. 1348-1360.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback

    AU - Lien, Yuan-Ching

    AU - Klumperink, Eric A.M.

    AU - Tenbroek, Bernard

    AU - Strange, Jon

    AU - Nauta, Bram

    PY - 2018/5/1

    Y1 - 2018/5/1

    N2 - Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.

    AB - Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.

    U2 - 10.1109/JSSC.2018.2791490

    DO - 10.1109/JSSC.2018.2791490

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    JO - IEEE journal of solid-state circuits

    JF - IEEE journal of solid-state circuits

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