Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback

Yuan-Ching Lien, Eric A.M. Klumperink, Bernard Tenbroek, Jon Strange, Bram Nauta

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9 Citations (Scopus)
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Abstract

Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.
Original languageEnglish
Pages (from-to)1348-1360
Number of pages13
JournalIEEE journal of solid-state circuits
Volume53
Issue number5
Early online date5 Feb 2018
DOIs
Publication statusPublished - 1 May 2018

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Poles
Feedback
Noise figure
Bandpass filters
Mobile phones
Frequency bands
Networks (circuits)

Cite this

@article{10d99a76641f4beab8973b0d5841d0b4,
title = "Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback",
abstract = "Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.",
author = "Yuan-Ching Lien and Klumperink, {Eric A.M.} and Bernard Tenbroek and Jon Strange and Bram Nauta",
year = "2018",
month = "5",
day = "1",
doi = "10.1109/JSSC.2018.2791490",
language = "English",
volume = "53",
pages = "1348--1360",
journal = "IEEE journal of solid-state circuits",
issn = "0018-9200",
publisher = "IEEE",
number = "5",

}

Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback. / Lien, Yuan-Ching ; Klumperink, Eric A.M.; Tenbroek, Bernard; Strange, Jon; Nauta, Bram .

In: IEEE journal of solid-state circuits, Vol. 53, No. 5, 01.05.2018, p. 1348-1360.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Enhanced-Selectivity high-linearity low-noise mixer-first receiver with complex pole pair due to capacitive positive feedback

AU - Lien, Yuan-Ching

AU - Klumperink, Eric A.M.

AU - Tenbroek, Bernard

AU - Strange, Jon

AU - Nauta, Bram

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.

AB - Abstract— A mixer-first receiver with enhanced selectivity and high dynamic range is proposed, targeting to remove SAW-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45nm Partially Depleted SOI technology achieves high out-of-band linearity (IIP3=39 dBm, IIP2=88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.

U2 - 10.1109/JSSC.2018.2791490

DO - 10.1109/JSSC.2018.2791490

M3 - Article

VL - 53

SP - 1348

EP - 1360

JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

SN - 0018-9200

IS - 5

ER -