Enhanced transparency ramp-type Josephson contacts through interlayer deposition

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparency. The interlayer restores the surface damaged by ion milling and has the advantage of an all in situ barrier deposition between two superconductors, leading to clean and well-defined interfaces. The method has been applied to Josephson junctions between high (YBa2Cu3O7–) and low temperature (Nb) superconductors, separated by a Au barrier. Transmission electron microscopy images of these junctions reveal crystalline YBa2Cu3O7– up to the interface with the Au barrier. The junctions have improved critical current density values exceeding 20 kA/cm2, normal state resistances of 3×10–8 cm2 and IcRn products of 0.7 mV at 4.2 K. Furthermore, the junction properties can be controlled by varying the Au barrier thickness.
Original languageUndefined
Pages (from-to)4579-4581
Number of pages3
JournalApplied physics letters
Volume80
Issue number24
DOIs
Publication statusPublished - 2002

Keywords

  • IR-43436
  • METIS-206648

Cite this

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title = "Enhanced transparency ramp-type Josephson contacts through interlayer deposition",
abstract = "A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparency. The interlayer restores the surface damaged by ion milling and has the advantage of an all in situ barrier deposition between two superconductors, leading to clean and well-defined interfaces. The method has been applied to Josephson junctions between high (YBa2Cu3O7–) and low temperature (Nb) superconductors, separated by a Au barrier. Transmission electron microscopy images of these junctions reveal crystalline YBa2Cu3O7– up to the interface with the Au barrier. The junctions have improved critical current density values exceeding 20 kA/cm2, normal state resistances of 3×10–8 cm2 and IcRn products of 0.7 mV at 4.2 K. Furthermore, the junction properties can be controlled by varying the Au barrier thickness.",
keywords = "IR-43436, METIS-206648",
author = "H.J.H. Smilde and Hilgenkamp, {Johannes W.M.} and Rijnders, {Augustinus J.H.M.} and Horst Rogalla and Blank, {David H.A.}",
year = "2002",
doi = "10.1063/1.1485305",
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volume = "80",
pages = "4579--4581",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
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Enhanced transparency ramp-type Josephson contacts through interlayer deposition. / Smilde, H.J.H.; Hilgenkamp, Johannes W.M.; Rijnders, Augustinus J.H.M.; Rogalla, Horst; Blank, David H.A.

In: Applied physics letters, Vol. 80, No. 24, 2002, p. 4579-4581.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Enhanced transparency ramp-type Josephson contacts through interlayer deposition

AU - Smilde, H.J.H.

AU - Hilgenkamp, Johannes W.M.

AU - Rijnders, Augustinus J.H.M.

AU - Rogalla, Horst

AU - Blank, David H.A.

PY - 2002

Y1 - 2002

N2 - A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparency. The interlayer restores the surface damaged by ion milling and has the advantage of an all in situ barrier deposition between two superconductors, leading to clean and well-defined interfaces. The method has been applied to Josephson junctions between high (YBa2Cu3O7–) and low temperature (Nb) superconductors, separated by a Au barrier. Transmission electron microscopy images of these junctions reveal crystalline YBa2Cu3O7– up to the interface with the Au barrier. The junctions have improved critical current density values exceeding 20 kA/cm2, normal state resistances of 3×10–8 cm2 and IcRn products of 0.7 mV at 4.2 K. Furthermore, the junction properties can be controlled by varying the Au barrier thickness.

AB - A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparency. The interlayer restores the surface damaged by ion milling and has the advantage of an all in situ barrier deposition between two superconductors, leading to clean and well-defined interfaces. The method has been applied to Josephson junctions between high (YBa2Cu3O7–) and low temperature (Nb) superconductors, separated by a Au barrier. Transmission electron microscopy images of these junctions reveal crystalline YBa2Cu3O7– up to the interface with the Au barrier. The junctions have improved critical current density values exceeding 20 kA/cm2, normal state resistances of 3×10–8 cm2 and IcRn products of 0.7 mV at 4.2 K. Furthermore, the junction properties can be controlled by varying the Au barrier thickness.

KW - IR-43436

KW - METIS-206648

U2 - 10.1063/1.1485305

DO - 10.1063/1.1485305

M3 - Article

VL - 80

SP - 4579

EP - 4581

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 24

ER -