Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing

Liesbeth Mulder; Hanne van de Glind; Alexander Brinkman; Omar Concepción

doi:10.3390/nano13040763

Enhancement of the Surface Morphology of (Bi_0.4Sb_0.6)₂Te₃ Thin Films by In Situ Thermal Annealing

Liesbeth Mulder, Hanne van de Glind, Alexander Brinkman, Omar Concepción^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi_0.4Sb_0.6)₂Te₃ films deposited by molecular beam epitaxy on Al₂O₃ (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

Original language	English
Article number	763
Journal	Nanomaterials
Volume	13
Issue number	4
DOIs	https://doi.org/10.3390/nano13040763
Publication status	Published - 15 Feb 2023

Keywords

(BiSb)Te
in situ thermal post anneal
molecular beam epitaxy
smooth surfaces
topological insulator

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10.3390/nano13040763Licence: CC BY

nanomaterials-13-00763Final published version, 6.18 MBLicence: CC BY

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title = "Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing",

abstract = "The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)2Te3 films deposited by molecular beam epitaxy on Al2O3 (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.",

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AU - Concepción, Omar

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N2 - The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)2Te3 films deposited by molecular beam epitaxy on Al2O3 (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

AB - The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)2Te3 films deposited by molecular beam epitaxy on Al2O3 (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

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Enhancement of the Surface Morphology of (Bi_0.4Sb_0.6)₂Te₃ Thin Films by In Situ Thermal Annealing

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