We have grown EuO thin films on silicon  and yttrium aluminate  from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate . Magnetization measurements confirm the stoichiometry of the film.
Beukers, J. N., Kleibeuker, J. E., Koster, G., Blank, D. H. A., Rijnders, A. J. H. M., Hilgenkamp, J. W. M., & Brinkman, A. (2010). Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy. Thin solid films, 518(18), 5173-5176. https://doi.org/10.1016/j.tsf.2010.04.071