Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

J.N. Beukers, J.E. Kleibeuker, Gertjan Koster, David H.A. Blank, Augustinus J.H.M. Rijnders, Johannes W.M. Hilgenkamp, Alexander Brinkman

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We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.
Original languageUndefined
Pages (from-to)5173-5176
JournalThin solid films
Issue number18
Publication statusPublished - 2010


  • IR-72405

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