Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

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Abstract

We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.
Original languageUndefined
Pages (from-to)5173-5176
JournalThin solid films
Volume518
Issue number18
DOIs
Publication statusPublished - 2010

Keywords

  • IR-72405

Cite this

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title = "Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy",
abstract = "We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.",
keywords = "IR-72405",
author = "J.N. Beukers and J.E. Kleibeuker and Gertjan Koster and Blank, {David H.A.} and Rijnders, {Augustinus J.H.M.} and Hilgenkamp, {Johannes W.M.} and Alexander Brinkman",
year = "2010",
doi = "10.1016/j.tsf.2010.04.071",
language = "Undefined",
volume = "518",
pages = "5173--5176",
journal = "Thin solid films",
issn = "0040-6090",
publisher = "Elsevier",
number = "18",

}

TY - JOUR

T1 - Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

AU - Beukers, J.N.

AU - Kleibeuker, J.E.

AU - Koster, Gertjan

AU - Blank, David H.A.

AU - Rijnders, Augustinus J.H.M.

AU - Hilgenkamp, Johannes W.M.

AU - Brinkman, Alexander

PY - 2010

Y1 - 2010

N2 - We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.

AB - We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.

KW - IR-72405

U2 - 10.1016/j.tsf.2010.04.071

DO - 10.1016/j.tsf.2010.04.071

M3 - Article

VL - 518

SP - 5173

EP - 5176

JO - Thin solid films

JF - Thin solid films

SN - 0040-6090

IS - 18

ER -