Abstract
We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.
Original language | Undefined |
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Pages (from-to) | 5173-5176 |
Journal | Thin solid films |
Volume | 518 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2010 |
Keywords
- IR-72405