Epitaxial ferroelectric oxides on silicon with perspectives for future device applications

Matja Spreitzer*, Dejan Klement, Tjasa Parkelj Potocnik, Urska Trstenjak, Zoran Jovanovic, Minh Duc Nguyen, Huiyu Yuan, Johan Evert ten Elshof, Evert Houwman, Gertjan Koster, Guus Rijnders, Jean Fompeyrine, Lior Kornblum, David P. Fenning, Yunting Liang, Wen Yi Tong, Philippe Ghosez

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

24 Citations (Scopus)
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Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications.

Original languageEnglish
Article number040701
JournalAPL materials
Issue number4
Publication statusPublished - 1 Apr 2021


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