Abstract
We report on the first layer growth of a Mn6+-doped material. Large-size BaSO4 substrates of 10×6×4 mm3 were grown from a LiCl solvent by the flux method. Flat surfaces of undoped BaSO4 were then achieved by use of liquid-phase epitaxy (LPE) from a CsCl–KCl–NaCl solvent. Finally, BaSO4:Mn6+ layers were grown by LPE with growth velocities of approximately 3 μmh−1, at temperatures of 550–508 ◦C. Absorption, luminescence, luminescence excitation and luminescence-decay measurements confirmed the incorporation of manganese solely in its hexavalent oxidation state. This material possesses potential as a near-infrared tunable laser with a wavelength range larger than Ti:sapphire.
| Original language | Undefined |
|---|---|
| Article number | 10.1007/s00340-002-0953-1 |
| Pages (from-to) | 59-62 |
| Number of pages | 4 |
| Journal | Applied physics B: Lasers and optics |
| Volume | 75 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2002 |
Keywords
- IOMS-APD: Active Photonic Devices
- IR-70081
- EWI-17547
Cite this
Ehrentraut, D., Pollnau, M., & Kück, S. (2002). Epitaxial growth and spectroscopic investigation of BaSO4:Mn6+ layers. Applied physics B: Lasers and optics, 75(1), 59-62. [10.1007/s00340-002-0953-1]. https://doi.org/10.1007/s00340-002-0953-1