Abstract
We report on the first layer growth of a Mn6+-doped material. Large-size BaSO4 substrates of 10×6×4 mm3 were grown from a LiCl solvent by the flux method. Flat surfaces of undoped BaSO4 were then achieved by use of liquid-phase epitaxy (LPE) from a CsCl–KCl–NaCl solvent. Finally, BaSO4:Mn6+ layers were grown by LPE with growth velocities of approximately 3 μmh−1, at temperatures of 550–508 ◦C. Absorption, luminescence, luminescence excitation and luminescence-decay measurements confirmed the incorporation of manganese solely in its hexavalent oxidation state. This material possesses potential as a near-infrared tunable laser with a wavelength range larger than Ti:sapphire.
Original language | Undefined |
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Article number | 10.1007/s00340-002-0953-1 |
Pages (from-to) | 59-62 |
Number of pages | 4 |
Journal | Applied physics B: Lasers and optics |
Volume | 75 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2002 |
Keywords
- IOMS-APD: Active Photonic Devices
- IR-70081
- EWI-17547