Epitaxial growth of large-area p+n diodes at 400 °c by Aluminum-Induced Crystallization

Agata Sakic; Lin Qi; Tom L.M. Scholtes; Johan Van Der Cingel; Lis K. Nanver

doi:10.1109/ESSDERC.2012.6343354

Epitaxial growth of large-area p⁺n diodes at 400 °c by Aluminum-Induced Crystallization

Agata Sakic^*, Lin Qi, Tom L.M. Scholtes, Johan Van Der Cingel, Lis K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Aluminum-Induced Crystallization is applied on crystalline Si substrates. By this method a physical-vapor-deposited amorphous Si layer is successfully transformed into a monocrystalline solid-phase epitaxy (SPE) p-doped layer at an anneal temperature of 400°C. The as-grown epitaxial layer takes on the orientation and the lattice constant of the substrate. It is shown that a complete coverage over large areas is possible if the c-Si interface is free of nucleation centers. This can be achieved by the proper oxide-patterning and/or chemical treatments of the substrate surface before deposition of the Al mediator layer. High-quality p⁺n diodes have been fabricated with areas up to 1×1 cm², having ideality factors down to 1.02 and low leakage currents in the 2-3 nA/cm² range. The full coverage by p⁺ SPE-Si is confirmed by material analysis.

Original language	English
Title of host publication	2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages	145-148
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343354
Publication status	Published - 11 Dec 2012
Externally published	Yes
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sept 2012 → 21 Sept 2012 Conference number: 42

Conference

Conference	42nd European Solid-State Device Research Conference, ESSDERC 2012
Abbreviated title	ESSDERC
Country/Territory	France
City	Bordeaux
Period	17/09/12 → 21/09/12

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title = "Epitaxial growth of large-area p+n diodes at 400 °c by Aluminum-Induced Crystallization",

abstract = "Aluminum-Induced Crystallization is applied on crystalline Si substrates. By this method a physical-vapor-deposited amorphous Si layer is successfully transformed into a monocrystalline solid-phase epitaxy (SPE) p-doped layer at an anneal temperature of 400°C. The as-grown epitaxial layer takes on the orientation and the lattice constant of the substrate. It is shown that a complete coverage over large areas is possible if the c-Si interface is free of nucleation centers. This can be achieved by the proper oxide-patterning and/or chemical treatments of the substrate surface before deposition of the Al mediator layer. High-quality p+n diodes have been fabricated with areas up to 1×1 cm2, having ideality factors down to 1.02 and low leakage currents in the 2-3 nA/cm2 range. The full coverage by p+ SPE-Si is confirmed by material analysis.",

author = "Agata Sakic and Lin Qi and Scholtes, {Tom L.M.} and {Van Der Cingel}, Johan and Nanver, {Lis K.}",

year = "2012",

month = dec,

day = "11",

doi = "10.1109/ESSDERC.2012.6343354",

language = "English",

isbn = "9781467317078",

pages = "145--148",

booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",

note = "42nd European Solid-State Device Research Conference, ESSDERC 2012, ESSDERC ; Conference date: 17-09-2012 Through 21-09-2012",

}

Sakic, A, Qi, L, Scholtes, TLM, Van Der Cingel, J & Nanver, LK 2012, Epitaxial growth of large-area p⁺n diodes at 400 °c by Aluminum-Induced Crystallization. in 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012., 6343354, pp. 145-148, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSDERC.2012.6343354

Epitaxial growth of large-area p⁺n diodes at 400 °c by Aluminum-Induced Crystallization. / Sakic, Agata; Qi, Lin; Scholtes, Tom L.M. et al.
2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. p. 145-148 6343354.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Epitaxial growth of large-area p+n diodes at 400 °c by Aluminum-Induced Crystallization

AU - Sakic, Agata

AU - Qi, Lin

AU - Scholtes, Tom L.M.

AU - Van Der Cingel, Johan

AU - Nanver, Lis K.

N1 - Conference code: 42

PY - 2012/12/11

Y1 - 2012/12/11

N2 - Aluminum-Induced Crystallization is applied on crystalline Si substrates. By this method a physical-vapor-deposited amorphous Si layer is successfully transformed into a monocrystalline solid-phase epitaxy (SPE) p-doped layer at an anneal temperature of 400°C. The as-grown epitaxial layer takes on the orientation and the lattice constant of the substrate. It is shown that a complete coverage over large areas is possible if the c-Si interface is free of nucleation centers. This can be achieved by the proper oxide-patterning and/or chemical treatments of the substrate surface before deposition of the Al mediator layer. High-quality p+n diodes have been fabricated with areas up to 1×1 cm2, having ideality factors down to 1.02 and low leakage currents in the 2-3 nA/cm2 range. The full coverage by p+ SPE-Si is confirmed by material analysis.

AB - Aluminum-Induced Crystallization is applied on crystalline Si substrates. By this method a physical-vapor-deposited amorphous Si layer is successfully transformed into a monocrystalline solid-phase epitaxy (SPE) p-doped layer at an anneal temperature of 400°C. The as-grown epitaxial layer takes on the orientation and the lattice constant of the substrate. It is shown that a complete coverage over large areas is possible if the c-Si interface is free of nucleation centers. This can be achieved by the proper oxide-patterning and/or chemical treatments of the substrate surface before deposition of the Al mediator layer. High-quality p+n diodes have been fabricated with areas up to 1×1 cm2, having ideality factors down to 1.02 and low leakage currents in the 2-3 nA/cm2 range. The full coverage by p+ SPE-Si is confirmed by material analysis.

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BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012

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ER -

Epitaxial growth of large-area p⁺n diodes at 400 °c by Aluminum-Induced Crystallization

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