Epitaxial growth of large-area p+n diodes at 400 °c by Aluminum-Induced Crystallization

Agata Sakic*, Lin Qi, Tom L.M. Scholtes, Johan Van Der Cingel, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)


Aluminum-Induced Crystallization is applied on crystalline Si substrates. By this method a physical-vapor-deposited amorphous Si layer is successfully transformed into a monocrystalline solid-phase epitaxy (SPE) p-doped layer at an anneal temperature of 400°C. The as-grown epitaxial layer takes on the orientation and the lattice constant of the substrate. It is shown that a complete coverage over large areas is possible if the c-Si interface is free of nucleation centers. This can be achieved by the proper oxide-patterning and/or chemical treatments of the substrate surface before deposition of the Al mediator layer. High-quality p+n diodes have been fabricated with areas up to 1×1 cm2, having ideality factors down to 1.02 and low leakage currents in the 2-3 nA/cm2 range. The full coverage by p+ SPE-Si is confirmed by material analysis.

Original languageEnglish
Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Number of pages4
Publication statusPublished - 11 Dec 2012
Externally publishedYes
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: 17 Sep 201221 Sep 2012
Conference number: 42


Conference42nd European Solid-State Device Research Conference, ESSDERC 2012
Abbreviated titleESSDERC


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